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参数资料
| 型号： | IXD611S7 |
| 厂商： | IXYS |
| 文件页数： | 1/14页 |
| 文件大小： | 0K |
| 描述： | IC DRVR HALF BRIDGE 600MA 14SOIC |
| 标准包装： | 424 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 14-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 14-SOIC |
| 包装： | 盒 |
| 配用： | EVLB001-ND - KIT EVAL DIMMABLE LIGHT BALLAST |
IXD611
IXD611
600V, 600 mA High & Low-side Driver
for N-Channel MOSFETs and IGBTs
Features
? Floating High Side Driver with boot-strap Power
supply along with a Low Side Driver.
? Fully operational to 600V
? ± 50V/ns dV/dt immunity
? Gate drive power supply range: 10 - 35V
? Undervoltage lockout for both output drivers
? Outputs are in phase with inputs
? Built using the advantages and compatibility
of CMOS and IXYS HDMOS TM processes
? Latch-Up protected over entire
operating range
? High peak output current: ± 600 mA
? Matched propagation delay for both outputs
? Low output impedance
? Low power supply current
General Description
The IXD611, with its two inputs referenced to ground, has high
speed low side and high side gate ouptuts to drive either a pair
of N-channel MOSFETs or IGBTs in a half-bridge totem pole
configuration. The High Side driver can control a MOSFET or
IGBT connected to a positive high voltage up to 600V. The logic
input stages are compatible with TTL or CMOS, have built-in
hysteresis and are fully immune to latch up over the entire
operating range. The IXD611 can withstand dV/dt on the output
side up to ± 50V/ns.
The IXD611 comes in either the 8-PIN PDIP (IXD611P1), 8-PIN
SOIC (IXD611S1), 14-PIN PDIP (IXD611P7), or the 14-PIN
SOIC (IXD611S7) packages.
Ordering Information
? Immune to negative voltage transients
Applications
Part Number
IXD611P1
IXD611P7
Package Type
8-PIN DIP
14-PIN DIP
?
?
?
?
?
Driving MOSFETs and IGBTs in half-bridge circuits
High voltage, high side and low side drivers
Motor Controls
Switch Mode Power Supplies (SMPS)
DC to DC Converters
IXD611S1
IXD611S7
8-PIN SOIC
14-PIN SOIC
?
Class D Switching Amplifiers
Figure 1A. Typical Circuit for IXD611P7/S7
Up to 600V
Warning: The IXD611 is ESD sensitive.
Figure 1B. Typical Circuit for IXD611P1/S1
Up to 600V
VCC
VCL
HGO
VCH
VCC
VCL
HGO
VCH
HIN
HIN
HS
To Load
HIN
HIN
HS
To Load
LIN
LIN
LIN
LIN
LS
GND
DG
LGO
GND
LS
LGO
? 2007 IXYS CORPORATION All rights reserved
1
First Release
DS99198A(10/07)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IXD611S7T/R | 功能描述:功率驱动器IC 0.6 Amps 35V 25 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDA20N120AS | 功能描述:IGBT 晶体管 20 Amps 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IXDA20N120AS_11 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:High Voltage IGBT |
| IXDA20N120AS-TUBE | 功能描述:IGBT 晶体管 20 Amps 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IXDD404 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:4 Amp Dual Low-Side Ultrafast MOSFET Driver |
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