- 您现在的位置：买卖IC网 > PDF目录20463 > IXD611S7 (IXYS)IC DRVR HALF BRIDGE 600MA 14SOIC PDF资料下载
参数资料
| 型号： | IXD611S7 |
| 厂商： | IXYS |
| 文件页数： | 5/14页 |
| 文件大小： | 0K |
| 描述： | IC DRVR HALF BRIDGE 600MA 14SOIC |
| 标准包装： | 424 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 14-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 14-SOIC |
| 包装： | 盒 |
| 配用： | EVLB001-ND - KIT EVAL DIMMABLE LIGHT BALLAST |
IXD611
Dynamic Electrical Characteristics
Symbol
t on
t off
t r
t f
t dm
Definition
Turn-on propagation delay
Turn-off propagation delay
Turn-on rise time
Turn-off fall time
Delay matching, HS & LS turn-on/off
Test Conditions
V CL = V CH = 15V, C LOAD = 1nF
V CL = V CH = 15V, C LOAD = 1nF
V CL = V CH = 15V, C LOAD = 1nF
V CL = V CH = 15V, C LOAD = 1nF
C LOAD = 1nF
Min
Typ
180
170
28
18
10
Max
200
190
35
25
20
Units
ns
ns
ns
ns
ns
Static Electrical Characteristics
Symbol
Definition
Test Conditions
Min
Typ
Max
Units
V INH
V INL
Logic “1” input voltage
Logic “0” input voltage
V CL = V CH = 15V
V CL = V CH = 15V
2.7
2.4
V
V
V HLGO / / V HHGO High level output voltage,
I O = 20mA
0.22
0.3
V
V CH -V HGO or V CL -V LGO
V LLGO / / V LHGO Low level output voltage,
I O = 20mA
0.16
0.25
V
V HGO or V LGO
I HL
I QHS
I QLS
I IN +
I IN -
HS to LS bias current.
Quiescent V CH supply current
Quiescent V CL supply current
Logic “1” input bias current
Logic “0” input bias current
V HS = 600V
V CH = 15V V IN = 0V or V IN = 5 V
V CL = 15V V IN = 0V or V IN = 5 V
V IN = V SUPPLY = 15V
V IN = 0V
0.12
0.7
0.18
11
1
0.2
0.8
0.3
20
2
mA
mA
mA
uA
uA
V CHUV +
V CHUV -
V CLUV +
V CLUV -
V CH supply undervoltage positive going threshold.
V CH supply undervoltage negative going threshold.
V CL supply undervoltage positive going threshold
V CL supply undervoltage negative going threshold.
7.5
7
7.5
7
8
7.3
8
7.5
8.5
8
8.5
8
V
V
V
V
V CHUVH , V CLUVH Undervoltage Hysteresis
0.3
0.6
V
I GO +
HS or LS Output high short circuit current; V GO = 15V, V IN = 5V, PW<10us 0.5
0.6
A
I GO -
HS or LS Output low short circuit current; V GO = 15V, V IN = 0V, PW<10us
-0.6
-0.5
A
Precaution : When performing the high voltage tests, adequate safety precautions should be taken.
? 2007 IXYS CORPORATION All rights reserved
5
相关PDF资料 |
PDF描述 |
|---|---|
| EBM15DCMH-S288 | CONN EDGECARD 30POS .156 EXTEND |
| 395-070-541-201 | CARD EDGE 70POS DL .100X.200 BLK |
| S561K33X7RP6UL5R | CAP CER 560PF 2KV 10% RADIAL |
| IXA531S10 | IC BRIDGE DRVR 3PH 500MA 48-MLP |
| EBA14DRSN-S288 | CONN EDGECARD 28POS .125 EXTEND |
相关代理商/技术参数 |
参数描述 |
|---|---|
| IXD611S7T/R | 功能描述:功率驱动器IC 0.6 Amps 35V 25 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDA20N120AS | 功能描述:IGBT 晶体管 20 Amps 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IXDA20N120AS_11 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:High Voltage IGBT |
| IXDA20N120AS-TUBE | 功能描述:IGBT 晶体管 20 Amps 1200V RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| IXDD404 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:4 Amp Dual Low-Side Ultrafast MOSFET Driver |
发布紧急采购，3分钟左右您将得到回复。