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| 型号： | IXDN430MYI |
| 厂商： | IXYS |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET/IGBT DRIVER TO-263 |
| 标准包装： | 50 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 41ns |
| 电流 - 峰： | 30A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 8.5 V ~ 35 V |
| 工作温度： | -55°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-6，D²Pak（5 引线+接片），TO-263BA |
| 供应商设备封装： | TO-263 |
| 包装： | 盒 |
| 配用： | EVDN430MYI-ND - BOARD EVALUATION IXDN430MYI |
| 其它名称： | Q1952551 |
IXDN430 / IXDI430 / IXDD430 / IXDS430
30 Amp Low-Side Ultrafast MOSFET / IGBT Driver
Features
? Built using the advantages and compatibility
of CMOS and IXYS HDMOS TM processes
? Latch-Up Protected
? High Peak Output Current: 30A Peak
? Wide Operating Range: 8.5V to 35V
? Under Voltage Lockout Protection
? Ability to Disable Output under Faults
? High Capacitive Load
Drive Capability: 5600 pF in <25ns
? Matched Rise And Fall Times
? Low Propagation Delay Time
? Low Output Impedance
? Low Supply Current
Applications
? Driving MOSFETs and IGBTs
? Motor Controls
? Line Drivers
? Pulse Generators
? Local Power ON / OFF Switch
? Switch Mode Power Supplies (SMPS)
? DC to DC Converters
? Pulse Transformer Driver
? Limiting di/dt Under Short Circuit
? Class D Switching Amplifiers
General Description
The IXDN430/IXDI430/IXDD430/IXDS430 are high speed high current
gate drivers specifically designed to drive MOSFETs and IGBTs to their
minimum switching time and maximum practical frequency limits. The
IXD_430 can source and sink 30A of peak current while producing
voltage rise and fall times of less than 30ns. The input of the drivers are
compatible with TTL or CMOS and are fully immune to latch up over the
entire operating range. Designed with small internal delays, cross
conduction/current shoot-through is virtually eliminated in all
configurations. Their features and wide safety margin in operating
voltage and power make the drivers unmatched in performance and
value.
The IXD_430 incorporates a unique ability to disable the output under
fault conditions. The standard undervoltage lockout voltages are 11.75V
for the IXD_430 parts and 8.5V for the IXD_430M parts. ULVO can be
set to either level in the IXDS430 with the UNSEL input line. When a
logical low is forced into the Enable inputs, both final output stage
MOSFETs (NMOS and PMOS) are turned off. As a result, the output
of the IXDD430 enters a tristate mode and enables a Soft Turn-Off of the
MOSFET when a short circuit is detected. This helps prevent damage
that could occur to the MOSFET if it were to be switched off abruptly due
to a dv/dt over-voltage transient.
The IXDN430 is configured as a noninverting gate driver, and the IXDI430
is an inverting gate driver. The IXDS430 can be configured either as a
noninverting or inverting driver. The IXD_430 are available in the standard
28-pin SIOC (SI-CT), 5-pin TO-220 (CI), and in the TO-263 (YI) surface
mount packages. CT or 'Cool Tab' for the 28-pin SOIC package refers
to the backside metal heatsink tab.
Ordering Information
P a rt N u m b e r
IX D D 4 3 0 Y I
IX D D 4 3 0 M Y I
IX D D 4 3 0 C I
IX D D 4 3 0 M C I
IX D I4 3 0 Y I
IX D I4 3 0 M Y I
IX D I4 3 0 C I
IX D I4 3 0 M C I
IX D N 4 3 0 Y I
IX D N 4 3 0 M Y I
IX D N 4 3 0 C I
IX D N 4 3 0 M C I
IX D S 4 3 0 S I
P ackage
T ype
5 -p in T O -2 6 3
5 -p in T O -2 2 0
5 -p in T O -2 6 3
5 -p in T O -2 2 0
5 -p in T O -2 6 3
5 -p in T O -2 2 0
2 8 -p in S O IC
Tem p. R ange
-5 5 ° C to + 1 2 5 °
-5 5 ° C to + 1 2 5 °
-5 5 ° C to + 1 2 5 °
-5 5 ° C to + 1 2 5 °
C o n fig u ra tio n
N o n In v e rtin g w ith
E n a b le
In v e rtin g
N o n In v e rtin g
In v e rtin g / N o n
In v e rtin g w ith
E n a b le
and UV SEL
U n d e r v o lta g e
L o c k -o u t
1 1 .7 5 V
8 .5 V
1 1 .7 5 V
8 .5 V
1 1 .7 5 V
8 .5 V
1 1 .7 5 V
8 .5 V
1 1 .7 5 V
8 .5 V
1 1 .7 5 V
8 .5 V
1 1 .7 5 V
or
8 .5 V
Copyright ? IXYS CORPORATION 2005
First Release
DS99045C(04/04)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IXDN430YI | 功能描述:功率驱动器IC 30 Amps 40V 0.4 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDN502D1 | 功能描述:功率驱动器IC 2 Amps 35V 3 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDN502D1T/R | 功能描述:功率驱动器IC 40V 4A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDN502PI | 功能描述:功率驱动器IC 40V 4A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDN502SIA | 功能描述:功率驱动器IC 2 Amps 40V 3.0 Ohms Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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