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参数资料
| 型号： | IXDN430MYI |
| 厂商： | IXYS |
| 文件页数： | 12/12页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET/IGBT DRIVER TO-263 |
| 标准包装： | 50 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 41ns |
| 电流 - 峰： | 30A |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 8.5 V ~ 35 V |
| 工作温度： | -55°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-6，D²Pak（5 引线+接片），TO-263BA |
| 供应商设备封装： | TO-263 |
| 包装： | 盒 |
| 配用： | EVDN430MYI-ND - BOARD EVALUATION IXDN430MYI |
| 其它名称： | Q1952551 |
IXDN430 / IXDI430 / IXDD430 / IXDS430
OUTPUT LEAD INDUCTANCE
Of equal importance to Supply Bypassing and Grounding are
issues related to the Output Lead Inductance. Every effort
should be made to keep the leads between the driver and it’s
load as short and wide as possible. If the driver must be placed
farther than 2” from the load, then the output leads should be
treated as transmission lines. In this case, a twisted-pair
should be considered, and the return line of each twisted pair
should be placed as close as possible to the ground pin of the
driver, and connect directly to the ground terminal of the load.
TTL to High Voltage CMOS Level Translation
(IXDD430 Only)
The enable (EN) input to the IXDD430 is a high voltage
CMOS logic level input where the EN input threshold is ?
V CC , and may not be compatible with 5V CMOS or TTL input
levels. The IXDD430 EN input was intentionally designed
for enhanced noise immunity with the high voltage CMOS
logic levels. In a typical gate driver application, V CC =15V
and the EN input threshold at 7.5V, a 5V CMOS logical high
input applied to this typical IXDD430 application’s EN input
A TTL or 5V CMOS logic low, V TTLLOW =~<0.8V, input applied to the
Q1 emitter will drive it on. This causes the level translator
output, the Q1 collector output to settle to V CESATQ1 +
V TTLLOW =<~2V, which is sufficiently low to be correctly interpreted
as a high voltage CMOS logic low (<1/3V CC =5V for V CC =15V given
in the IXDD430 data sheet.)
A TTL high, V TTLHIGH =>~2.4V, or a 5V CMOS high,
V 5VCMOSHIGH =~>3.5V, applied to the EN input of the circuit in
Figure 29 will cause Q1 to be biased off. This results in Q1
collector being pulled up by R3 to V CC =15V, and provides a
high voltage CMOS logic high output. The high voltage CMOS
logical EN output applied to the IXDD430 EN input will enable
it, allowing the gate driver to fully function as an 30 Amp
output driver.
The total component cost of the circuit in Figure 29 is less
than $0.10 if purchased in quantities >1K pieces. It is
recommended that the physical placement of the level
translator circuit be placed close to the source of the TTL or
CMOS logic circuits to maximize noise rejection.
will be misinterpreted as a logical low, and may cause
undesirable or unexpected results. The note below is for
optional adaptation of TTL or 5V CMOS levels.
The circuit in Figure 29 alleviates this potential logic level
misinterpretation by translating a TTL or 5V CMOS logic
input to high voltage CMOS logic levels needed by the
IXDD430 EN input. From the figure, V CC is the gate driver
power supply, typically set between 8V to 20V, and V DD is
the logic power supply, typically between 3.3V to 5.5V.
Resistors R1 and R2 form a voltage divider network so
that the Q1 base is positioned at the midpoint of the
expected TTL logic transition levels.
Figure 29 - TTL to High Voltage CMOS Level Translator
Vcc
(From gate driver
power supply)
(From logic
Vdd
power supply)
R3
10K
R1
10K
Q1
High Voltage
CMOS EN output
(To IXDD430 EN input)
2N3904
R2
10K
5V CMOS or TTL input
EN
IXYS Corporation
3540 Bassett St; Santa Clara, CA 95054
Tel: 408-982-0700; Fax: 408-496-0670
www.ixys.com
e-mail: sales@ixys.net
12
IXYS Semiconductor GmbH
Edisonstrasse15 ; D-68623; Lampertheim
Tel: +49-6206-503-0; Fax: +49-6206-503627
e-mail: marcom@ixys.de
DS99045A(8/03)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| IXDN430YI | 功能描述:功率驱动器IC 30 Amps 40V 0.4 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDN502D1 | 功能描述:功率驱动器IC 2 Amps 35V 3 Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDN502D1T/R | 功能描述:功率驱动器IC 40V 4A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDN502PI | 功能描述:功率驱动器IC 40V 4A RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| IXDN502SIA | 功能描述:功率驱动器IC 2 Amps 40V 3.0 Ohms Rds RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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