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| 型号： | IXFX360N10T |
| 厂商： | IXYS |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 360A PLUS247 |
| 标准包装： | 30 |
| 系列： | GigaMOS™ HiPerFET™ |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 360A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.9 毫欧 @ 100A，10V |
| Id 时的 Vgs(th)（最大）： | 5V @ 3mA |
| 闸电荷(Qg) @ Vgs： | 525nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 33000pF @ 25V |
| 功率 - 最大： | 1250W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-247-3 |
| 供应商设备封装： | PLUS247?-3 |
| 包装： | 管件 |
IXFK360N10T
IXFX360N10T
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-264 Outline
g fs
C iss
C oss
C rss
R Gi
V DS = 10V, I D = 60A, Note 1
V GS = 0V, V DS = 25V, f = 1MHz
Gate Input Resistance
110
180
33
3160
400
1.20
S
nF
pF
pF
Ω
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
R thJC
R thCS
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 100A
R G = 1 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
47
100
80
160
525
145
165
0.05
ns
ns
ns
ns
nC
nC
nC
0.12 ° C/W
° C/W
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
Millimeter
Min. Max.
4.82 5.13
2.54 2.89
2.00 2.10
1.12 1.42
2.39 2.69
2.90 3.09
0.53 0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00 0.25
Terminals: 1 - Gate
2 - Drain
3 - Source
4 - Drain
Inches
Min. Max.
.190 .202
.100 .114
.079 .083
.044 .056
.094 .106
.114 .122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
K
L
L1
P
Q
Q1
0.00 0.25
20.32 20.83
2.29 2.59
3.17 3.66
6.07 6.27
8.38 8.69
.000 .010
.800 .820
.090 .102
.125 .144
.239 .247
.330 .342
Source-Drain Diode
R
R1
3.81 4.32
1.78 2.29
.150 .170
.070 .090
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
S 6.04 6.30
T 1.57 1.83
PLUS 247 TM Outline
.238 .248
.062 .072
I S
I SM
V SD
V GS = 0V
Repetitive, Pulse Width Limited by T JM
I F = 100A, V GS = 0V, Note 1
360
1440
1.2
A
A
V
t rr
I RM
Q RM
I F = 100A, V GS = 0V
-di/dt = 100A/ μ s
V R = 50V
6.60
0.33
130
ns
A
μ C
Terminals: 1 - Gate
Notes 1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
2 - Drain (Collector)
3 - Source (Emitter)
2. Includes lead resistance.
Dim.
4 - Drain (Collector)
Millimeter Inches
Min. Max.
Min. Max.
A
A 1
A 2
4.83 5.21
2.29 2.54
1.91 2.16
.190 .205
.090 .100
.075 .085
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
b
b 1
b 2
C
D
E
e
L
L1
Q
R
1.14 1.40
1.91 2.13
2.92 3.12
0.61 0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81 4.32
5.59 6.20
4.32 4.83
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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