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参数资料
| 型号： | L6919ETR |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 稳压器 |
| 英文描述： | SWITCHING CONTROLLER, PDSO28 |
| 封装： | SO-28 |
| 文件页数： | 15/33页 |
| 文件大小： | 644K |
| 代理商： | L6919ETR |
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L6919E
22/33
or at least a portion of the total capacitance needed, has to be placed close to the power section in order to
eliminate the stray inductance generated by the copper traces. Low ESR and ESL capacitors are required.
s
Power Connections Related.
Fig.16b shows some small signal components placement, and how and where to mix signal and power ground
planes. The distance from drivers and mosfet gates should be reduced as much as possible. Propagation delay
times as well as for the voltage spikes generated by the distributed inductance along the copper traces are so
minimized.
In fact, the further the mosfet is from the device, the longer is the interconnecting gate trace and as a conse-
quence, the higher are the voltage spikes corresponding to the gate PWM rising and falling signals. Even if
these spikes are clamped by inherent internal diodes, propagation delays, noise and potential causes of insta-
bilities are introduced jeopardizing good system behavior. One important consequence is that the switching
losses for the high side mosfet are significantly increased.
For this reason, it is suggested to have the device oriented with the driver side towards the mosfets and the
GATEx and PHASEx traces walking together toward the high side mosfet in order to minimize distance (see fig
17). In addition, since the PHASEx pin is the return path for the high side driver, this pin must be connected
directly to the High Side mosfet Source pin to have a proper driving for this mosfet.
For the LS mosfets, the return path is the PGND pin: it can be connected directly to the power ground plane (if
implemented) or in the same way to the LS mosfets Source pin. GATEx and PHASEx connections (and also
PGND when no power ground plane is implemented) must also be designed to handle current peaks in excess
of 2A (30 mils wide is suggested).
Gate resistors of few ohms help in reducing the power dissipated by the IC without compromising the system
efficiency.
Figure 17. Device orientation (left) and sense nets routing (right)
The placement of other components is also important:
– The bootstrap capacitor must be placed as close as possible to the BOOTx and PHASEx pins to mini-
mize the loop that is created.
– Decoupling capacitor from Vcc and SGND placed as close as possible to the involved pins.
– Decoupling capacitor from VCCDR and PGND placed as close as possible to those pins. This capacitor
sustains the peak currents requested by the low-side mosfet drivers.
– Refer to SGND all the sensible components such as frequency set-up resistor (when present) and also
the optional resistor from FB to GND used to give the positive droop effect.
– Connect SGND to PGND on the load side (output capacitor) to avoid undesirable load regulation effect
and to ensure the right precision to the regulation when the remote sense buffer is not used.
Towards HS mosfet
(30 mils wide)
Towards LS mosfet
(30 mils wide)
Towards HS mosfet
(30 mils wide)
To LS mosfet
(or sense resistor)
To regulated output
To LS mosfet
(or sense resistor)
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相关代理商/技术参数 |
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| L-692 | 制造商:RHOMBUS-IND 制造商全称:Rhombus Industries Inc. 功能描述:Common Mode Inductor |
| L6920 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1V HIGH EFFICIENCY SYNCRONOUS STEP UP CONVERTER |
| L6920D | 功能描述:直流/直流开关转换器 0.6 to 5.5V Step-Up RoHS:否 制造商:STMicroelectronics 最大输入电压:4.5 V 开关频率:1.5 MHz 输出电压:4.6 V 输出电流:250 mA 输出端数量:2 最大工作温度:+ 85 C 安装风格:SMD/SMT |
| L6920DB | 功能描述:直流/直流开关转换器 Synchronous Rectifer Step Up Converter RoHS:否 制造商:STMicroelectronics 最大输入电压:4.5 V 开关频率:1.5 MHz 输出电压:4.6 V 输出电流:250 mA 输出端数量:2 最大工作温度:+ 85 C 安装风格:SMD/SMT |
| L6920DBTR | 功能描述:直流/直流开关转换器 SYNCRONOUS RECT. STEP UP CONVERTER RoHS:否 制造商:STMicroelectronics 最大输入电压:4.5 V 开关频率:1.5 MHz 输出电压:4.6 V 输出电流:250 mA 输出端数量:2 最大工作温度:+ 85 C 安装风格:SMD/SMT |
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