参数资料
型号: LTC3859EUHF#PBF
厂商: Linear Technology
文件页数: 26/42页
文件大小: 0K
描述: IC REG CTRLR BST PWM CM 38-QFN
标准包装: 52
PWM 型: 电流模式,Burst Mode?
输出数: 3
频率 - 最大: 850kHz
占空比: 100%
电源电压: 4.5 V ~ 38 V
降压:
升压:
回扫:
反相:
倍增器:
除法器:
Cuk:
隔离:
工作温度: -40°C ~ 125°C
封装/外壳: 38-WFQFN 裸露焊盘
包装: 管件
LTC3859
APPLICATIONS INFORMATION
V X(MASTER)
V OUT(SLAVE)
V X(MASTER)
V OUT(SLAVE)
TIME
7a. Coincident Tracking
3859 F07a
TIME
7b. Radiometric Tracking
3859 F07b
Figure 7. Two Different Modes of Output Voltage Tracking
V OUT
R B
LTC3859
V FB1,2
at the INTV CC pin from either the V BIAS supply pin or the
EXTV CC pin depending on the connection of the EXTV CC
V X
R A
pin. INTV CC powers the gate drivers and much of the
LTC3859’s internal circuitry. The V BIAS LDO and the EXTV CC
R TRACKB
TRACK/SS1,2
LDO regulate INTV CC to 5.4V. Each of these can supply a
peak current of 50mA and must be bypassed to ground
with a minimum of 4.7μF ceramic capacitor. No matter
V X R A R + R TRACKB
R TRACKA
3859 F08
Figure 8. Using the TRACK/SS Pin for Tracking
Alternatively, the TRACK/SS1 and TRACK/SS2 pins for the
two buck controllers can be used to track two (or more) sup-
plies during start-up, as shown qualitatively in Figures 7a
and 7b. To do this, a resistor divider should be connected
from the master supply (V X ) to the TRACK/SS pin of the
slave supply (V OUT ), as shown in Figure 8. During start-up
V OUT will track V X according to the ratio set by the resis-
tor divider:
= ? TRACKA
V OUT R TRACKA R A + R B
For coincident tracking (V OUT = V X during start-up),
R A = R TRACKA
R B = R TRACKB
INTV CC Regulators
The LTC3859 features two separate internal P-channel
low dropout linear regulators (LDO) that supply power
what type of bulk capacitor is used, an additional 1μF
ceramic capacitor placed directly adjacent to the INTV CC
and PGND IC pins is highly recommended. Good bypassing
is needed to supply the high transient currents required
by the MOSFET gate drivers and to prevent interaction
between the channels.
High input voltage applications in which large MOSFETs
are being driven at high frequencies may cause the
maximum junction temperature rating for the LTC3859 to
be exceeded. The INTV CC current, which is dominated by
the gate charge current, may be supplied by either the V BIAS
LDO or the EXTV CC LDO. When the voltage on the EXTV CC
pin is less than 4.7V, the V BIAS LDO is enabled. Power
dissipation for the IC in this case is highest and is equal to
V BIAS ? I INTVCC . The gate charge current is dependent
on operating frequency as discussed in the Ef?ciency
Considerations section. The junction temperature can be
estimated by using the equations given in Note 2 of the
Electrical Characteristics. For example, the LTC3859 INTV CC
current is limited to less than 40mA from a 40V supply
when not using the EXTV CC supply at a 70°C ambient
temperature in the QFN package:
T J = 70°C + (40mA)(40V)(34°C/W) = 125°C
3859fa
26
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