参数资料
| 型号： | LTC4101EG#PBF |
| 厂商： | Linear Technology |
| 文件页数： | 24/30页 |
| 文件大小： | 0K |
| 描述： | IC CNTRLR BATT CHRG 24-SSOP |
| 标准包装： | 59 |
| 功能： | 充电管理 |
| 电池化学： | 智能电池 |
| 电源电压： | 6 V ~ 28 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 24-SSOP（0.209"，5.30mm 宽） |
| 供应商设备封装： | 24-SSOP |
| 包装： | 管件 |
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LTC4101
APPLICATIONS INFORMATION
The Schottky diode D1, shown in the Typical Application
on the back page, conducts during the dead-time between
the conduction of the two power MOSFETs. This prevents
the body diode of the bottom MOSFET from turning on and
storing charge during the dead-time, which could cost as
much as 1% in ef?ciency. A 1A Schottky is generally a good
size for 4A regulators due to the relatively small average
current. Larger diodes can result in additional transition
losses due to their larger junction capacitance.
The diode may be omitted if the ef?ciency loss can be
tolerated.
Calculating IC Power Dissipation
The power dissipation of the LTC4101 is dependent upon
the gate charge of the top and bottom MOSFETs (Q2 &
Q3 respectively) The gate charge (QG) is determined from
the manufacturer’s data sheet and is dependent upon both
the gate voltage swing and the drain voltage swing of the
MOSFET. Use 6V for the gate voltage swing and V DCIN for
the drain voltage swing.
P D = V DCIN ? (f OSC (QG Q2 + QG Q3 ) + I DCIN ) + V DD ? I DD
Example: V DCIN = 12V, f OSC = 345kHz, QG Q2 = 25nC,
QG Q3 = 15nC, I DCIN = 5mA, V DD = 5.5V,
I DD = 1mA.
P D = 231mW
Calculating V DD Current
The LTC4101 V DD current, or I DD , consist of three parts:
a. I RUN = Current due to active clocking and bias inside
the IC.
b. I THRM = Current due to thermistor circuit activity.
c. I ACCEL = Current due to SMBus acceleration activity.
I DD = I RUN + I THRM + I ACCEL
a) I RUN current is basically independent of SCL clock rate.
Once the LTC4101 determines that there is activity on
the SMBus, it turns on its internal HF oscillator. This
HF oscillator remains on until a stop event occurs or
SDA and SCL are at logic level 1 for the SMBus timeout
period. Then it shuts off the HF oscillator. Thus, the
length of the transmission and the rate of transmission
bursts are more important in determining how much
current the LTC4101 burns, rather than the SCL rate.
In the equation below, I Q is the static current the IC
consumes as a function of the V DD voltage when not
active. Since it is hard to quantify the actual messages
going down the SMBus, one must estimate the SMBus
activity level in term of bus utilization per second.
I RUN = Message Duty Cycle ? 950μA
+ (1 – Message Duty Cycle) ? I Q
where I Q(TYP) = V DD /47.2k
b) I THRM current is due to SafetySignal (thermistor pin)
sampling that will vary with the presence of DC power
being on or off. DCDIV is detected every 32ms. RTHX
is the value of the safety signal resistance, which will
vary with temperature or battery con?guration.
b1) I THRM(ON) when DC is on:
I THRM(ON)_OVERRANGE = 1/16 ? V DD /(54.9k + RTHX)
where RTHX > 100k
I THRM(ON)_COLD = 1/8 ? V DD /(54.9k + RTHX)
where RTHX > 30k
I THRM(ON)_NORMAL = 1/8 ? V DD /(54.9k + RTHX)
+ 1/16 ? V DD /(1.13k + RTHX)
I THRM(ON)_HOT* = 1/8 ? V DD /(54.9k + RTHX) + 1/8
? V DD /(1.13k + RTHX) RTHX < 3k
* includes underrange
b2) I THRM(OFF) when DC is off, the thermistor monitoring
rate is reduced to every 250ms or less.
I THRM(OFF)_OVERRANGE = 1/50 ? V DD /(54.9k + RTHX)
where RTHX > 100k
I THRM(OFF)_COLD = 1/50 ? V DD /(54.9k + RTHX)
+ 1/1000 ? V DD /(54.9k + RTHX) RTHX > 30k
I THRM(OFF)_NORMAL = 1/50 ? V DD /(54.9k + RTHX)
+ 1/500 ? V DD /(54.9k + RTHX) + 1/1000
? V DD /(1.13k + RTHX)
I THRM(OFF)_HOT* = 1/50 ? V DD /(54.9k + RTHX)
+ 1/500 ? V DD /(54.9k + RTHX) + 1/500
? V DD /(1.13k + RTHX)
where RTHX < 3k
* includes underrange
4101fa
24
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