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参数资料
| 型号： | M25P10-AVMB6T/X |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | FLASH 2.7V PROM, DSO8 |
| 封装： | 2 X 3 MM, ROHS COMPLIANT, UFDFPN-8 |
| 文件页数： | 11/51页 |
| 文件大小： | 1103K |
| 代理商： | M25P10-AVMB6T/X |
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M25P10-A
Instructions
19/51
6.3
Read Identification (RDID)
The Read Identification (RDID) instruction is available in products with process technology
code X and Y.
The Read Identification (RDID) instruction allows the 8-bit manufacturer identification to be
read, followed by two bytes of device identification. The manufacturer identification is
assigned by JEDEC, and has the value 20h for Numonyx. The device identification is
assigned by the device manufacturer, and indicates the memory type in the first byte (20h),
and the memory capacity of the device in the second byte (11h).
Any Read Identification (RDID) instruction while an Erase or Program cycle is in progress, is
not decoded, and has no effect on the cycle that is in progress.
The Read Identification (RDID) instruction should not be issued while the device is in Deep
Power-down mode.
The device is first selected by driving Chip Select (S) Low. Then, the 8-bit instruction code
for the instruction is shifted in. This is followed by the 24-bit device identification, stored in
the memory, being shifted out on Serial Data output (Q), each bit being shifted out during the
falling edge of Serial Clock (C).
The instruction sequence is shown in Figure 9.
The Read Identification (RDID) instruction is terminated by driving Chip Select (S) High at
any time during data output.
When Chip Select (S) is driven High, the device is put in the Standby Power mode. Once in
the Standby Power mode, the device waits to be selected, so that it can receive, decode and
execute instructions.
Figure 9.
Read Identification (RDID) instruction sequence and data-out sequence
Table 5.
Read identification (RDID) data-out sequence
Manufacturer identification
Device identification
Memory type
Memory capacity
20h
11h
C
D
S
2
1
3456789 10 11 12 13 14 15
Instruction
0
AI06809b
Q
Manufacturer identification
High Impedance
MSB
15 14 13
3210
Device identification
MSB
16 17 18
28 29 30 31
相关PDF资料 |
PDF描述 |
|---|---|
| M25P10-AVME3 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P10-AVME3G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P10-AVME3P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P10-AVME3T | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P10-AVME3TG | 4 Mbit Uniform Sector, Serial Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M25P10-AVME3 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P10-AVME3G | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P10-AVME3P | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P10-AVME3T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P10-AVME3TG | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
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