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参数资料
| 型号： | M25P10-AVMB6T/X |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | FLASH 2.7V PROM, DSO8 |
| 封装： | 2 X 3 MM, ROHS COMPLIANT, UFDFPN-8 |
| 文件页数： | 18/51页 |
| 文件大小： | 1103K |
| 代理商： | M25P10-AVMB6T/X |
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M25P10-A
Instructions
25/51
6.7
Read Data Bytes at Higher Speed (FAST_READ)
The device is first selected by driving Chip Select (S) Low. The instruction code for the Read
Data Bytes at Higher Speed (FAST_READ) instruction is followed by a 3-byte address (A23-
A0) and a dummy byte, each bit being latched-in during the rising edge of Serial Clock (C).
Then the memory contents, at that address, is shifted out on Serial Data output (Q), each bit
being shifted out, at a maximum frequency fC, during the falling edge of Serial Clock (C).
The instruction sequence is shown in Figure 13.
The first byte addressed can be at any location. The address is automatically incremented
to the next higher address after each byte of data is shifted out. The whole memory can,
therefore, be read with a single Read Data Bytes at Higher Speed (FAST_READ)
instruction. When the highest address is reached, the address counter rolls over to
000000h, allowing the read sequence to be continued indefinitely.
The Read Data Bytes at Higher Speed (FAST_READ) instruction is terminated by driving
Chip Select (S) High. Chip Select (S) can be driven High at any time during data output. Any
Read Data Bytes at Higher Speed (FAST_READ) instruction, while an Erase, Program or
Write cycle is in progress, is rejected without having any effects on the cycle that is in
progress.
Figure 13.
Read Data Bytes at Higher Speed (FAST_READ) instruction sequence
and data-out sequence
1. Address bits A23 to A17 are Don’t care.
C
D
AI04006
S
Q
23
2
1
3456789 10
28 29 30 31
22 21
3210
High Impedance
Instruction
24-bit address
0
C
D
S
Q
32 33 34
36 37 38 39 40 41 42 43 44 45 46
765432
0
1
DATA OUT 1
Dummy byte
MSB
7
6543210
DATA OUT 2
MSB
7
47
765432
0
1
35
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PDF描述 |
|---|---|
| M25P10-AVME3 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P10-AVME3G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P10-AVME3P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P10-AVME3T | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P10-AVME3TG | 4 Mbit Uniform Sector, Serial Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M25P10-AVME3 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P10-AVME3G | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P10-AVME3P | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P10-AVME3T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P10-AVME3TG | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
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