- 您现在的位置：买卖IC网 > PDF目录224121 > M25P10-AVMB6T/X (NUMONYX) FLASH 2.7V PROM, DSO8 PDF资料下载
参数资料
| 型号： | M25P10-AVMB6T/X |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | FLASH 2.7V PROM, DSO8 |
| 封装： | 2 X 3 MM, ROHS COMPLIANT, UFDFPN-8 |
| 文件页数： | 21/51页 |
| 文件大小： | 1103K |
| 代理商： | M25P10-AVMB6T/X |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页当前第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页
Instructions
M25P10-A
28/51
6.9
Sector Erase (SE)
The Sector Erase (SE) instruction sets to ‘1’ (FFh) all bits inside the chosen sector. Before it
can be accepted, a Write Enable (WREN) instruction must previously have been executed.
After the Write Enable (WREN) instruction has been decoded, the device sets the Write
Enable Latch (WEL).
The Sector Erase (SE) instruction is entered by driving Chip Select (S) Low, followed by the
instruction code, and three address bytes on Serial Data input (D). Any address inside the
sector (see Table 3) is a valid address for the Sector Erase (SE) instruction. Chip Select (S)
must be driven Low for the entire duration of the sequence.
The instruction sequence is shown in Figure 15.
Chip Select (S) must be driven High after the eighth bit of the last address byte has been
latched in, otherwise the Sector Erase (SE) instruction is not executed. As soon as Chip
Select (S) is driven High, the self-timed Sector Erase cycle (whose duration is tSE) is
initiated. While the Sector Erase cycle is in progress, the Status Register may be read to
check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1
during the self-timed Sector Erase cycle, and is 0 when it is completed. At some unspecified
time before the cycle is completed, the Write Enable Latch (WEL) bit is reset.
A Sector Erase (SE) instruction applied to a page which is protected by the Block Protect
Figure 15.
Sector Erase (SE) instruction sequence
1. Address bits A23 to A17 are Don’t care.
24-bit address
C
D
AI03751D
S
2
1
3456789
29 30 31
Instruction
0
23 22
2
0
1
MSB
相关PDF资料 |
PDF描述 |
|---|---|
| M25P10-AVME3 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P10-AVME3G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P10-AVME3P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P10-AVME3T | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P10-AVME3TG | 4 Mbit Uniform Sector, Serial Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M25P10-AVME3 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P10-AVME3G | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P10-AVME3P | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P10-AVME3T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P10-AVME3TG | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
发布紧急采购，3分钟左右您将得到回复。