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参数资料
| 型号： | M25P10-AVMB6T/X |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | FLASH 2.7V PROM, DSO8 |
| 封装： | 2 X 3 MM, ROHS COMPLIANT, UFDFPN-8 |
| 文件页数： | 3/51页 |
| 文件大小： | 1103K |
| 代理商： | M25P10-AVMB6T/X |
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M25P10-A
Operating features
11/51
4
Operating features
4.1
Page Programming
To program one data byte, two instructions are required: Write Enable (WREN), which is
one byte, and a Page Program (PP) sequence, which consists of four bytes plus data. This
is followed by the internal Program cycle (of duration tPP).
To spread this overhead, the Page Program (PP) instruction allows up to 256 bytes to be
programmed at a time (changing bits from 1 to 0), provided that they lie in consecutive
addresses on the same page of memory.
For optimized timings, it is recommended to use the Page Program (PP) instruction to
program all consecutive targeted bytes in a single sequence versus using several Page
Program (PP) sequences with each containing only a few bytes (see Page Program (PP)
4.2
Sector Erase and Bulk Erase
The Page Program (PP) instruction allows bits to be reset from 1 to 0. Before this can be
applied, the bytes of memory need to have been erased to all 1s (FFh). This can be
achieved either a sector at a time, using the Sector Erase (SE) instruction, or throughout the
entire memory, using the Bulk Erase (BE) instruction. This starts an internal Erase cycle (of
duration tSE or tBE).
The Erase instruction must be preceded by a Write Enable (WREN) instruction.
4.3
Polling during a Write, Program or Erase cycle
A further improvement in the time to Write Status Register (WRSR), Program (PP) or Erase
(SE or BE) can be achieved by not waiting for the worst case delay (tW, tPP, tSE, or tBE). The
Write In Progress (WIP) bit is provided in the Status Register so that the application program
can monitor its value, polling it to establish when the previous Write cycle, Program cycle or
Erase cycle is complete.
4.4
Active Power, Standby Power and Deep Power-down modes
When Chip Select (S) is Low, the device is selected, and in the Active Power mode.
When Chip Select (S) is High, the device is deselected, but could remain in the Active
Power mode until all internal cycles have completed (Program, Erase, Write Status
Register). The device then goes in to the Standby Power mode. The device consumption
drops to ICC1.
The Deep Power-down mode is entered when the specific instruction (the Deep Power-
down (DP) instruction) is executed. The device consumption drops further to ICC2. The
device remains in this mode until another specific instruction (the Release from Deep
Power-down and Read Electronic Signature (RES) instruction) is executed.
While in the Deep Power-down mode, the device ignores all write, program and erase
instructions (see Deep Power-down (DP)). This can be used as an extra software protection
相关PDF资料 |
PDF描述 |
|---|---|
| M25P10-AVME3 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P10-AVME3G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P10-AVME3P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P10-AVME3T | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P10-AVME3TG | 4 Mbit Uniform Sector, Serial Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M25P10-AVME3 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P10-AVME3G | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P10-AVME3P | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P10-AVME3T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P10-AVME3TG | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
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