- 您现在的位置：买卖IC网 > PDF目录224121 > M25P10-AVMB6T/X (NUMONYX) FLASH 2.7V PROM, DSO8 PDF资料下载
参数资料
| 型号： | M25P10-AVMB6T/X |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | FLASH 2.7V PROM, DSO8 |
| 封装： | 2 X 3 MM, ROHS COMPLIANT, UFDFPN-8 |
| 文件页数： | 35/51页 |
| 文件大小： | 1103K |
| 代理商： | M25P10-AVMB6T/X |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页当前第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页
DC and AC parameters
M25P10-A
40/51
Table 18.
AC characteristics (25 MHz operation, device grade 6 or 3)
Symbol
Alt.
Parameter
Min
Typ
Max
Unit
fC
Clock frequency for the following
instructions: FAST_READ, PP, SE, BE, DP,
RES, WREN, WRDI, RDSR, WRSR
D.C.
25
MHz
fR
Clock frequency for READ instructions
D.C.
20
MHz
tCH(1)
1. tCH + tCL must be greater than or equal to 1/ fC.
tCLH
Clock High time
18
ns
tCL(1)
tCLL
Clock Low time
18
ns
tCLCH(2)
2. Value guaranteed by characterization, not 100% tested in production.
Clock Rise time(3) (peak to peak)
3. Expressed as a slew-rate.
0.1
V/ns
tCHCL(2)
Clock Fall time(3) (peak to peak)
0.1
V/ns
tSLCH
tCSS
S Active Setup time (relative to C)
10
ns
tCHSL
S Not Active Hold time (relative to C)
10
ns
tDVCH
tDSU
Data In Setup time
5
ns
tCHDX
tDH
Data In Hold time
5
ns
tCHSH
S Active Hold time (relative to C)
10
ns
tSHCH
S Not Active Setup time (relative to C)
10
ns
tSHSL
tCSH
S Deselect time
100
ns
tSHQZ(2)
tDIS
Output Disable time
15
ns
tCLQV
tV
Clock Low to Output Valid
15
ns
tCLQX
tHO
Output Hold time
0
ns
tHLCH
HOLD Setup time (relative to C)
10
ns
tCHHH
HOLD Hold time (relative to C)
10
ns
tHHCH
HOLD Setup time (relative to C)
10
ns
tCHHL
HOLD Hold time (relative to C)
10
ns
tHHQX(2)
tLZ
HOLD to Output Low-Z
15
ns
tHLQZ(2)
tHZ
HOLD to Output High-Z
20
ns
tWHSL(4)
4. Only applicable as a constraint for a WRSR instruction when SRWD is set to ‘1’.
Write Protect Setup time
20
ns
tSHWL(4)
Write Protect Hold time
100
ns
S High to Deep Power-down mode
3
μs
tRES1(2)
S High to Standby mode without Read
Electronic Signature
3 or 30(5)
5. It is 30 μs in devices produced with the ‘X’ and ‘Y’ process technology (grade 3 devices are only produced
using the ‘X’ process technology). Details of how to find the process letter on the device marking are given
in the application note AN1995.
μs
tRES2(2)
S High to Standby mode with Read
Electronic Signature
1.8 or 30(5)
μs
相关PDF资料 |
PDF描述 |
|---|---|
| M25P10-AVME3 | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P10-AVME3G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P10-AVME3P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P10-AVME3T | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25P10-AVME3TG | 4 Mbit Uniform Sector, Serial Flash Memory |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M25P10-AVME3 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P10-AVME3G | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P10-AVME3P | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P10-AVME3T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
| M25P10-AVME3TG | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit to 32 Mbit, Low Voltage, Serial Flash Memory With 40 MHz or 50 MHz SPI Bus Interface |
发布紧急采购，3分钟左右您将得到回复。