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参数资料
| 型号： | M28F220 |
| 厂商： | 意法半导体 |
| 英文描述： | 2Mbit (256Kb x8 or 128Kb x16, Boot Block) Flash Memory(2Mb闪速存储器) |
| 中文描述： | 2Mbit的（256Kb的x8或128KB的x16插槽，引导块）快闪记忆体（处理器闪速存储器） |
| 文件页数： | 2/32页 |
| 文件大小： | 226K |
| 代理商： | M28F220 |
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VSS
E
A0
DQ9
DQ1
DQ2
A1
A3
A2
A8
NC
NC
W
RP
A16
BYTE
VSS
A15
A14
DQ5
DQ12
G
DQ4
VCC
DQ11
DQ10
DQ3
NC
NC
NC
A7
VPP
WP
AI01798B
M28F220
(Normal)
12
13
1
24
25
36
37
48
A13
A12
DQ15A–1
DQ7
A4
DQ0
A11
A10
A9
DQ14
DQ6
DQ13
A6
A5
DQ8
Figure 2A. TSOPPin Connections
Warning:
NC = Not Connected.
G
DQ0
DQ8
DQ1
DQ9
A3
A2
A1
A0
E
VSS
A13
A14
A15
A16
BYTE
VSS
DQ15A–1
DQ7
DQ14
DQ6
DQ13
A12
DQ5
DQ12
DQ2
DQ10
DQ3
DQ11
VCC
DQ4
A9
A10
W
A8
A4
VPP
WP
RP
A7
A6
A5
AI01299B
M28F220
8
9
10
11
12
13
14
15
16
17
2
3
4
5
6
7
32
31
30
29
28
27
26
25
24
23
22
20
21
19
18
44
43
42
41
39
38
37
36
35
34
33
A11
40
1
NC
Figure 2B. SO Pin Connections
Warning:
NC = Not Connected.
Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature
(4)
–40 to125
°
C
T
BIAS
Temperature Under Bias
–50 to125
°
C
T
STG
Storage Temperature
–65 to150
°
C
V
IO
(2, 3)
Input or Output Voltages
–0.6 to V
CC
+ 0.5
V
V
CC
Supply Voltage
–0.6 to 7
V
V
(A9, RP)
(2)
A9, RP Voltage
–0.6 to 13.5
V
V
PP
(2)
Program Supply Voltage, during Erase
or Programming
–0.6 to 14
V
Notes:
1. Except for therating ”Operating Temperature Range”, stresses above those listed in theTable ”AbsoluteMaximum Ratings”
may cause permanentdamage to thedevice. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the Operatingsections of this specification is not implied.Exposure to Absolute Maximum
Rating conditions for extendedperiods may affectdevice reliability.Refer also tothe STMicroelectronics SURE Program and other
relevant quality documents.
2. Minimum Voltagemay undershoot to –2V during transitionand for less than 20ns.
3. Maximum Voltagemay overshoot to 7V during transition and for less than 20ns.
4. Depends on range.
Table2. Absolute MaximumRatings
(1)
2/32
M28F220
相关PDF资料 |
PDF描述 |
|---|---|
| M28F256 | 256 Kbit (32Kb x8, Bulk) Flash Memory(256K位闪速存储器) |
| M28F410 | 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Flash Memory(4M位(512Kx8/256K x16）闪速存储器) |
| M28F411 | 4 Mbit (512Kb x8, Boot Block) Flash Memory(4M位闪速存储器) |
| M28F420 | 4Mbit (512Kb x8 or 256Kb x16, Boot Block) Flash Memory(4Mb闪速存储器) |
| M28LV16 | 16K (2K x 8) Parallel EEPROM with Software Data Protection(16K低压并行EEPROM,软件数据保护) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M28F256 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256K(32K x8, Chip Erase)FLASH MEMORY |
| M28F256-10B1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
| M28F256-10B3TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
| M28F256-10B6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
| M28F256-10C1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
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