参数资料
型号: M28F220
厂商: 意法半导体
英文描述: 2Mbit (256Kb x8 or 128Kb x16, Boot Block) Flash Memory(2Mb闪速存储器)
中文描述: 2Mbit的(256Kb的x8或128KB的x16插槽,引导块)快闪记忆体(处理器闪速存储器)
文件页数: 20/32页
文件大小: 226K
代理商: M28F220
Symbol
Alt
Parameter
M28F220
Unit
-60
-70
-80
High Speed
Interface
Standard
Interface
Standard
Interface
Min
Max
Min
Max
Min
Max
t
AVAV
t
WC
Write Cycle Time
60
70
80
ns
t
PHEL
t
PS
Power Down High to Chip
Enable Low
210
210
210
ns
t
WLEL
t
CS
Write Enable Low to Chip
Enable Low
0
0
0
ns
t
ELEH
t
CP
Chip Enable Low to Chip
Enable High
50
50
60
ns
t
DVEH
t
DS
Data Validto Chip Enable High
35
35
35
ns
t
EHDX
t
DH
Chip Enable High to Data
Transition
0
0
0
ns
t
EHWH
t
WH
Chip Enable High to Write
Enable High
10
10
10
ns
t
EHEL
t
CPH
Chip Enable High to Chip
Enable Low
10
20
30
ns
t
AVEH
t
AS
Address Valid to Chip Enable
High
50
50
50
ns
t
PHHEH
(4)
t
PHS
Power Down V
HH
(Boot Block
Unlock) to Chip EnableHigh
60
70
80
ns
t
WPHEH
Write Protect High to Chip
Enable High
60
70
80
ns
t
VPHEH
(4)
t
VPS
V
PP
High to Chip Enable High
60
70
80
ns
t
EHAX
t
AH
Chip Enable High to Address
Transition
0
0
0
ns
t
EHQV1(2, 3)
Chip Enable High to Output
Valid (Word/Byte Program)
6
6
6
μ
s
t
EHQV2(2, 3)
Chip Enable High to Output
Valid (Boot Block Erase)
0.3
0.3
0.3
sec
t
EHQV3(2)
Chip Enable High to Output
Valid (Parameter Block Erase)
0.3
0.3
0.3
sec
t
EHQV4(2)
Chip Enable High to Output
Valid (Main Block Erase)
0.6
0.6
0.6
sec
t
QVPH
(4)
t
PHH
Output Valid to Reset/Power
Down High
0
0
0
ns
t
QVVPL(4)
t
VPH
Output Valid to V
PP
Low
0
0
0
ns
t
PHBR(4)
Reset/Power Down High to
Boot BlockRelock
200
200
200
ns
Notes:
1. See AC Testing Measurement conditions for timing measurements.
2. Time is measured to Status Register Read giving bit b7 = ’1’.
3. For Program or Erase of the Boot Block RP must be at V
HH
, or WP at V
IH
.
4. Sampled only,not 100% tested.
Table15A. Write AC Characteristics,Chip EnableControlled
(1)
(T
A
= 0 to 70
°
C, –40 to 85
°
C or–40 to 125
°
C; V
CC
= 5V
±
10% or 5V
±
5%; V
PP
= 12V
±
5% or 12V
±
10%)
20/32
M28F220
相关PDF资料
PDF描述
M28F256 256 Kbit (32Kb x8, Bulk) Flash Memory(256K位闪速存储器)
M28F410 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Flash Memory(4M位(512Kx8/256K x16)闪速存储器)
M28F411 4 Mbit (512Kb x8, Boot Block) Flash Memory(4M位闪速存储器)
M28F420 4Mbit (512Kb x8 or 256Kb x16, Boot Block) Flash Memory(4Mb闪速存储器)
M28LV16 16K (2K x 8) Parallel EEPROM with Software Data Protection(16K低压并行EEPROM,软件数据保护)
相关代理商/技术参数
参数描述
M28F256 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256K(32K x8, Chip Erase)FLASH MEMORY
M28F256-10B1TR 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory
M28F256-10B3TR 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory
M28F256-10B6TR 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory
M28F256-10C1TR 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory