- 您现在的位置：买卖IC网 > PDF目录377808 > M28F220 (意法半导体) 2Mbit (256Kb x8 or 128Kb x16, Boot Block) Flash Memory(2Mb闪速存储器) PDF资料下载
参数资料
| 型号： | M28F220 |
| 厂商： | 意法半导体 |
| 英文描述： | 2Mbit (256Kb x8 or 128Kb x16, Boot Block) Flash Memory(2Mb闪速存储器) |
| 中文描述： | 2Mbit的（256Kb的x8或128KB的x16插槽，引导块）快闪记忆体（处理器闪速存储器） |
| 文件页数： | 8/32页 |
| 文件大小： | 226K |
| 代理商： | M28F220 |
第1页第2页第3页第4页第5页第6页第7页当前第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页
Mnemon
ic
Bit
Name
Logic
Level
Definition
Note
P/ECS
7
P/E.C. Status
’1’
Ready
Indicates the P/E.C. status, check during Program
or Erase, and on completion before checking bits
b4 or b5 for Program or Erase Success
’0’
Busy
ESS
6
Erase
Suspend
Status
’1’
Suspended
On an EraseSuspend instruction P/ECS and
ESS bits are set to ’1’. ESS bit remains ’1’until an
Erase Resume instructionis given.
’0’
In progress or
Completed
ES
5
Erase Status
’1’
Erase Error
ES bit is set to ’1’ if P/E.C. has applied the
maximum number of erase pulses to the block
without achieving an erase verify.
’0’
Erase Success
PS
4
Program
Status
’1’
Program Error
PS bit set to ’1’ if the P/E.C.has failed to program
a byte or word.
’0’
Program
Success
VPPS
3
V
PP
Status
’1’
V
PP
Low, Abort
VPPS bit is set if the V
PP
voltage is below
V
(min) when a Program or Erase instruction
has been executed.
’0’
V
PP
OK
2
Reserved
1
Reserved
0
Reserved
Notes:
Logic level ’1’is High,’0’ is Low.
Table8. StatusRegister
Program (PG) Instruction.
This instruction uses
two write operations.The first command written is
the Program Set-up command 40h (or 10h). A
secondwriteoperationlatchestheAddressandthe
Data to be written and starts the P/E.C. Read
operationsoutput the statusregister after the pro-
gramminghas started.
Memoryprogrammingis onlymade bywriting’0’in
place of ’1’ in a byte or word.
During the execution of the programming by the
P/E.C., the memory accepts only the RSR (Read
StatusRegister)instruction.TheStatusRegisterbit
b7 returns’0’while theprogrammingis in progress
and’1’whenithascompleted.Aftercompletionthe
Statusregisterbitb4 returns’1’ if there has beena
Program Failure. Status Register bit b3 returns a
’1’ if V
PP
does not remain at V
PPH
when program-
ming is attemptedand/or duringprogramming.
V
PP
mustbeat V
PPH
whenprogramming,program-
ming should not be attempted when V
PP
< V
PPH
as the results will be uncertain. Programming
abortsif V
PP
dropsbelowV
PPH
or RP goes Low. If
aborted the data may be incorrect. Then after
having cleared the Status Register (CLRS), the
memory must be erasedand re-programmed.
Clear Status Register (CLRS) Instruction.
The
ClearStatusRegisterusesa singlewriteoperation
which clears bits b3, b4 and b5, if latched to ’1’ by
the P/E.C., to ’0’. Its use is necessary before any
new operationwhen an error has been detected.
8/32
M28F220
相关PDF资料 |
PDF描述 |
|---|---|
| M28F256 | 256 Kbit (32Kb x8, Bulk) Flash Memory(256K位闪速存储器) |
| M28F410 | 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Flash Memory(4M位(512Kx8/256K x16）闪速存储器) |
| M28F411 | 4 Mbit (512Kb x8, Boot Block) Flash Memory(4M位闪速存储器) |
| M28F420 | 4Mbit (512Kb x8 or 256Kb x16, Boot Block) Flash Memory(4Mb闪速存储器) |
| M28LV16 | 16K (2K x 8) Parallel EEPROM with Software Data Protection(16K低压并行EEPROM,软件数据保护) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M28F256 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:256K(32K x8, Chip Erase)FLASH MEMORY |
| M28F256-10B1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
| M28F256-10B3TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
| M28F256-10B6TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
| M28F256-10C1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
发布紧急采购，3分钟左右您将得到回复。