参数资料
型号: M29F400FB55M3F2
元件分类: PROM
英文描述: 256K X 16 FLASH 5V PROM, 55 ns, PDSO44
封装: 0.500 INCH, ROHS COMPLIANT, PLASTIC, SOP-44
文件页数: 16/65页
文件大小: 1669K
代理商: M29F400FB55M3F2
M29FxxxFT, M29FxxxFB
Bus Operations
23/65
3.6
Special Bus Operations
Additional bus operations can be performed to read the Electronic Signature and also to
apply and remove Block Protection. These bus operations are intended for use by
programming equipment and are not usually used in applications. They require VID to be
applied to some pins.
3.7
Electronic Signature.
The memory has two codes, the manufacturer code and the device code, that can be read
to identify the memory. These codes can be read by applying the signals listed in Tables
and Table 3., Bus Operations.
3.8
Block Protection and Block Unprotection.
Each block can be separately protected against accidental Program or Erase. Protected
blocks can be unprotected to allow data to be changed.
There are two methods available for protecting and unprotecting the blocks, one for use on
programming equipment and the other for in-system use. Block Protect and Blocks
Unprotect operations are described in Appendix Appendix C.
Table 2.
Bus Operations, BYTE = VIL
X = VIL or VIH.
Operation
E
G
W
Address Inputs
DQ15A–1, A0-A19
Data Inputs/Outputs
DQ14-DQ8
DQ7-DQ0
Bus Read
VIL VIL VIH Cell Address
Hi-Z
Data Output
Bus Write
VIL VIH VIL Command Address
Hi-Z
Data Input
Output Disable X
VIH VIH X
Hi-Z
Standby
VIH X
X
Hi-Z
Read
Manufacturer
Code
VIL VIL VIH
A0 = VIL, A1 = VIL, A9 = VID,
Others VIL or VIH
Hi-Z
0x01
Read Device
Code
VIL VIL VIH
A0 = VIH, A1 = VIL, A9 = VID,
Others VIL or VIH
Hi-Z
0x51 (M29F200FT)
0x57 (M29F200FB
0x23 (M29F400FT)
0xAB (M29F400FB
0xD6 (M29F800FT)
0x58 (M29F800FB
0xD2 (M29F160FT)
0xD8 (M29F160FB)
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