- 您现在的位置：买卖IC网 > PDF目录180125 > M29F400FB55M3F2 256K X 16 FLASH 5V PROM, 55 ns, PDSO44 PDF资料下载
参数资料
| 型号： | M29F400FB55M3F2 |
| 元件分类： | PROM |
| 英文描述： | 256K X 16 FLASH 5V PROM, 55 ns, PDSO44 |
| 封装： | 0.500 INCH, ROHS COMPLIANT, PLASTIC, SOP-44 |
| 文件页数： | 25/65页 |
| 文件大小： | 1669K |
| 代理商： | M29F400FB55M3F2 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页当前第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页
M29FxxxFT, M29FxxxFB
Command Interface
31/65
Table 6.
Program/Erase Times and Program/Erase Endurance Cycles, M29F160F
Typical values are measured at room temperature and nominal voltages; typical and maximum values are samples, not 100%
tested.
Chip Erase, Program, and Chip Program parameters: Maximum value measured at worst case conditions for both temperature
and VCC after 100,000 program/erase cycles.
Block Erase and Erase Suspend Latency parameters: Maximum value measured at worst case conditions for both temperature
and VCC.
Table 7.
Program/Erase Times and Program/Erase Endurance Cycles, M29F800F
Typical values are measured at room temperature and nominal voltages; typical and maximum values are samples, not 100%
tested.
Chip Erase, Program, and Chip Program parameters: Maximum value measured at worst case conditions for both temperature
and VCC after 100,000 program/erase cycles.
Block Erase and Erase Suspend Latency parameter: Maximum value measured at worst case conditions for both temperature
and VCC.
Parameter
Min
Typical
Max
Unit
Chip Erase
—
25
120
s
Block Erase (64 KBytes)
—
0.8
6
s
Erase Suspend Latency Time
—
20
25
μs
Program (Byte or Word)
—
11
200
μs
Chip Program (Byte by Byte)
—
24
120
s
Chip Program (Word by Word)
—
12
60
s
Program/Erase Cycles (per Block)
100,000
—
cycles
Data Retention
20
—
years
Parameter
Min
Typical
Max
Unit
Chip Erase
—
12
60
s
Block Erase (64 KBytes)
—
0.8
6
s
Erase Suspend Latency Time
—
20
25
μs
Program (Byte or Word)
—
11
200
μs
Chip Program (Byte by Byte)
—
12
—
s
Chip Program (Word by Word)
—
6
30
s
Program/Erase Cycles (per Block)
100,000
—
cycles
Data Retention
20
—
years
相关PDF资料 |
PDF描述 |
|---|---|
| M29F400FB5AN6F2 | 256K X 16 FLASH 5V PROM, 55 ns, PDSO48 |
| M29W800B-120N5RTR | 1M X 8 FLASH 3V PROM, 120 ns, PDSO48 |
| M29W800T-150M6 | 1M X 8 FLASH 3V PROM, 150 ns, PDSO44 |
| M29W800FB9N3F | 512K X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| M2CT-90A1-24ER | PUSHBUTTON SWITCH, DPST, MOMENTARY, PANEL MOUNT-THREADED |
相关代理商/技术参数 |
参数描述 |
|---|---|
| M29F400FB55M3F2 TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 4MBIT 55NS 44SO |
| M29F400FB55M3T2 | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE 5V - Trays |
| M29F400FB55N3E2 | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE 5V - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 4MBIT 55NS 48TSOP |
| M29F400FB55N3F2 | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE 5V - Tape and Reel |
| M29F400FB55N3F2 TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 4MBIT 55NS 48TSOP |
发布紧急采购，3分钟左右您将得到回复。