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参数资料
| 型号： | M29F400FB55M3F2 |
| 元件分类： | PROM |
| 英文描述： | 256K X 16 FLASH 5V PROM, 55 ns, PDSO44 |
| 封装： | 0.500 INCH, ROHS COMPLIANT, PLASTIC, SOP-44 |
| 文件页数： | 51/65页 |
| 文件大小： | 1669K |
| 代理商： | M29F400FB55M3F2 |
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M29FxxxFT, M29FxxxFB
Common Flash Interface (CFI)
55/65
Table 32.
CFI Query System Interface Information
Table 33.
Device Geometry Definition
Address
Data
Description
Value
x16
x8
1Bh
36h
0045h
VCC Logic Supply Minimum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
4.5 V
1Ch
38h
0055h
VCC Logic Supply Maximum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
5.5 V
1Dh
3Ah
0000h
VPP [Programming] Supply Minimum Program/Erase voltage
NA
1Eh
3Ch
0000h
VPP [Programming] Supply Maximum Program/Erase voltage
NA
1Fh
3Eh
0003h
Typical timeout per single Byte/Word program = 2n μs8 μs
20h
40h
0000h
Typical timeout for minimum size write buffer program = 2n μsNA
21h
42h
000Ah
Typical timeout per individual block erase = 2n ms
1 s
22h
44h
0000h
Typical timeout for full chip erase = 2n ms
NA
23h
46h
0004h
Maximum timeout for Byte/Word program = 2n times typical
256 μs
24h
48h
0000h
Maximum timeout for write buffer program = 2n times typical
NA
25h
4Ah
0003h
Maximum timeout per individual block erase = 2n times typical
8 s
26h
4Ch
0000h
Maximum timeout for chip erase = 2n times typical
NA
Address
Data
Description
Value
x16
x8
27h
4Eh
0015h
Device Size = 2n in number of Bytes
2 MByte
0014h
1 MByte
0013h
512 KByte
0012h
256 KByte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface Code description
x8, x16
Async.
2Ah
2Bh
54h
56h
0000h
Maximum number of Bytes in multi-Byte program or page = 2n
NA
2Ch
58h
0004h
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing
contiguous Erase Blocks of the same size.
4
2Dh
2Eh
5Ah
5Ch
0000h
Region 1 Information
Number of identical size erase block = 0000h+1
1
2Fh
30h
5Eh
60h
0040h
0000h
Region 1 Information
Block size in Region 1 = 0040h * 256 Byte
16 KByte
31h
32h
62h
64h
0001h
0000h
Region 2 Information
Number of identical size erase block = 0001h+1
2
33h
34h
66h
68h
0020h
0000h
Region 2 Information
Block size in Region 2 = 0020h * 256 Byte
8 KByte
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PDF描述 |
|---|---|
| M29F400FB5AN6F2 | 256K X 16 FLASH 5V PROM, 55 ns, PDSO48 |
| M29W800B-120N5RTR | 1M X 8 FLASH 3V PROM, 120 ns, PDSO48 |
| M29W800T-150M6 | 1M X 8 FLASH 3V PROM, 150 ns, PDSO44 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M29F400FB55M3F2 TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 4MBIT 55NS 44SO |
| M29F400FB55M3T2 | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE 5V - Trays |
| M29F400FB55N3E2 | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE 5V - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 4MBIT 55NS 48TSOP |
| M29F400FB55N3F2 | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE 5V - Tape and Reel |
| M29F400FB55N3F2 TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 4MBIT 55NS 48TSOP |
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