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参数资料
| 型号： | M29W800FB9N3F |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 512K X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| 封装： | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 |
| 文件页数： | 10/49页 |
| 文件大小： | 936K |
| 代理商： | M29W800FB9N3F |
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Command interface
M29W800FT, M29W800FB
4.7
Chip Erase command
The Chip Erase command can be used to erase the entire chip. Six bus write operations are
required to issue the Chip Erase command and start the program/erase controller.
If any blocks are protected then these are ignored and all the other blocks are erased. If all
of the blocks are protected the chip erase operation appears to start but will terminate within
about 100 s, leaving the data unchanged. No error condition is given when protected
blocks are ignored.
During the erase operation the memory will ignore all commands. It is not possible to issue
any command to abort the operation. Typical chip erase times are given in Table 6: Program,
erase times and endurance cycles. All bus read operations during the chip erase operation
will output the status register on the data inputs/outputs. See the Section 5: Status register
for more details.
After the chip erase operation has completed the memory will return to the read mode,
unless an error has occurred. When an error occurs the memory will continue to output the
status register. A Read/Reset command must be issued to reset the error condition and
return to read mode.
The Chip Erase command sets all of the bits in unprotected blocks of the memory to ’1’. All
previous data is lost.
4.8
Block Erase command
The Block Erase command can be used to erase a list of one or more blocks. Six bus write
operations are required to select the first block in the list. Each additional block in the list can
be selected by repeating the sixth bus write operation using the address of the additional
block. The block erase operation starts the program/erase controller about 50 s after the
last bus write operation. Once the program/erase controller starts it is not possible to select
any more blocks. Each additional block must therefore be selected within 50 s of the last
block. The 50 s timer restarts when an additional block is selected. The status register can
be read after the sixth bus write operation. See the status register for details on how to
identify if the program/erase controller has started the block erase operation.
If any selected blocks are protected then these are ignored and all the other selected blocks
are erased. If all of the selected blocks are protected the block erase operation appears to
start but will terminate within about 100 s, leaving the data unchanged. No error condition
is given when protected blocks are ignored.
During the block erase operation the memory will ignore all commands except the Erase
Suspend command. Typical block erase times are given in Program, erase times and
endurance cycles. All bus read operations during the block erase operation will output the
status register on the data inputs/outputs. See Section 5: Status register for more details.
After the block erase operation has completed the memory will return to the read mode,
unless an error has occurred. When an error occurs the memory will continue to output the
status register. A Read/Reset command must be issued to reset the error condition and
return to read mode.
The Block Erase command sets all of the bits in the unprotected selected blocks to ’1’. All
previous data in the selected blocks is lost.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M29W800FT70D11 | 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Gel-pak, waffle pack, wafer, diced wafer on film |
| M29W800FT70N3E | 制造商:Micron Technology Inc 功能描述:IC FLASH 8MBIT 70NS 48TSOP |
| M29W800FT70N3F | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel |
| M29W800FT70N3F TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 8MBIT 70NS 48TSOP |
| M29W800FT70ZA3SE | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 8MBIT 70NS 48TFBGA |
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