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参数资料
| 型号： | M29W800FB9N3F |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 512K X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| 封装： | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 |
| 文件页数： | 6/49页 |
| 文件大小： | 936K |
| 代理商： | M29W800FB9N3F |
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Bus operations
M29W800FT, M29W800FB
3.6
Special bus operations
Additional bus operations can be performed to read the electronic signature and also to
apply and remove block protection. These bus operations are intended for use by
programming equipment and are not usually used in applications. They require VID to be
applied to some pins.
3.7
Electronic signature
The memory has two codes, the manufacturer code and the device code, that can be read
to identify the memory. These codes can be read by applying the signals listed in Table 2
and Table 3, Bus operations.
3.8
Block protection and blocks unprotection
Each block can be separately protected against accidental program or erase. Protected
blocks can be unprotected to allow data to be changed.
There are two methods available for protecting and unprotecting the blocks, one for use on
programming equipment and the other for in-system use. Block protect and chip unprotect
operations are described in Appendix C: Block protection.
Table 2.
Bus operations, BYTE = VIL
(1)
1.
X = VIL or VIH.
Operation
E
G
W
Address inputs
DQ15A–1, A0-A18
Data inputs/outputs
DQ14-DQ8
DQ7-DQ0
Bus read
VIL
VIL VIH Cell address
Hi-Z
Data output
Bus write
VIL VIH VIL Command address
Hi-Z
Data input
Output disable
X
VIH VIH X
Hi-Z
Standby
VIH
X
Hi-Z
Read manufacturer
code
VIL
VIL VIH
A0 = VIL, A1 = VIL, A9 = VID,
others VIL or VIH
Hi-Z
20h
Read device code
VIL
VIL VIH
A0 = VIH, A1 = VIL, A9 = VID,
others VIL or VIH
Hi-Z
D7h (M29W800FT)
5Bh (M29W800FB)
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