参数资料
型号: M29W800FB9N3F
厂商: NUMONYX
元件分类: PROM
英文描述: 512K X 16 FLASH 3V PROM, 90 ns, PDSO48
封装: 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48
文件页数: 3/49页
文件大小: 936K
代理商: M29W800FB9N3F
M29W800FT, M29W800FB
Signal descriptions
2.7
Write Enable (W)
The Write Enable, W, controls the bus write operation of the memory’s command interface.
2.8
Reset/Block Temporary Unprotect (RP)
The Reset/Block Temporary Unprotect pin can be used to apply a hardware reset to the
memory or to temporarily unprotect all blocks that have been protected.
A hardware reset is achieved by holding Reset/Block Temporary Unprotect Low, VIL, for at
least tPLPX. After Reset/Block Temporary Unprotect goes High, VIH, the memory will be
ready for bus read and bus write operations after tPHEL or tRHEL, whichever occurs last. See
details.
Holding RP at VID will temporarily unprotect the protected blocks in the memory. Program
and erase operations on all blocks will be possible. The transition from VIH to VID must be
slower than tPHPHH.
2.9
Ready/Busy Output (RB)
The Ready/Busy pin is an open-drain output that can be used to identify when the device is
performing a program or erase operation. During program or erase operations Ready/Busy
is Low, VOL. Ready/Busy is high-impedance during read mode, auto select mode and erase
suspend mode.
After a hardware reset, bus read and bus write operations cannot begin until Ready/Busy
The use of an open-drain output allows the Ready/Busy pins from several memories to be
connected to a single pull-up resistor. A Low will then indicate that one, or more, of the
memories is busy.
2.10
Byte/Word Organization Select (BYTE)
The Byte/Word Organization Select pin is used to switch between the 8-bit and 16-bit bus
modes of the memory. When Byte/Word Organization Select is Low, VIL, the memory is in 8-
bit mode, when it is High, VIH, the memory is in 16-bit mode.
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