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参数资料
| 型号： | M29W800FB9N3F |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 512K X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| 封装： | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 |
| 文件页数： | 14/49页 |
| 文件大小： | 936K |
| 代理商： | M29W800FB9N3F |
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M29W800FT, M29W800FB
Command interface
Table 5.
Commands, 8-bit mode, BYTE = VIL
(1)
Command
Len
g
th
Bus write operations
1st
2nd
3rd
4th
5th
6th
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read/Reset
1X
F0
3
AAA
AA
555
55
X
F0
Auto Select
3
AAA
AA
555
55
AAA
90
Program
4
AAA
AA
555
55
AAA
A0
PA
PD
Unlock Bypass
3
AAA
AA
555
55
AAA
20
Unlock Bypass
Program
2X
A0
PA
PD
Unlock Bypass Reset
2
X
90
X
00
Chip Erase
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
AAA
10
Block Erase
6+
AAA
AA
555
55
AAA
80
AAA
AA
555
55
BA
30
Erase Suspend
1
X
B0
Erase Resume
1
X
30
Read CFI Query
1
AA
98
1.
X don’t care, PA program address, PD program data, BA any address in the block.
All values in the table are in hexadecimal.
The command interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A18, DQ8-DQ14 and DQ15
are don’t care. DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH.
Table 6.
Program, erase times and endurance cycles
Parameter
Min.
Typ. (1) (2)
Max. (2)
Unit
Chip erase
12
60 (3)
s
Block erase (64 Kbytes)
0.8
6 (4)
s
Erase suspend latency time
15
25 (3)
s
Program (byte or word)
10
200 (3)
s
Chip program (byte by byte)
12
60 (3)
s
Chip program (word by word)
6
30 (4)
s
Program/erase cycles (per block)
100,000
cycles
Data retention
20
years
1.
Typical values measured at room temperature and nominal voltages.
2.
Sampled, but not 100% tested.
3.
Maximum value measured at worst case conditions for both temperature and VCC after 100, 000 program/erase cycles.
4.
Maximum value measured at worst case conditions for both temperature and VCC.
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