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参数资料
| 型号： | M29W800FB9N3F |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 512K X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| 封装： | 12 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-48 |
| 文件页数： | 5/49页 |
| 文件大小： | 936K |
| 代理商： | M29W800FB9N3F |
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M29W800FT, M29W800FB
Bus operations
3
Bus operations
There are five standard bus operations that control the device. These are bus read, bus
operations, for a summary. Typically glitches of less than 5 ns on Chip Enable or Write
Enable are ignored by the memory and do not affect bus operations.
3.1
Bus read
Bus read operations read from the memory cells, or specific registers in the command
interface. A valid bus read operation involves setting the desired address on the address
inputs, applying a Low signal, VIL, to Chip Enable and Output Enable and keeping Write
AC waveforms, and Figure 12: Read AC characteristics for details of when the output
becomes valid.
3.2
Bus write
Bus write operations write to the command interface. A valid bus write operation begins by
setting the desired address on the address inputs. The address inputs are latched by the
command interface on the falling edge of Chip Enable or Write Enable, whichever occurs
last. The data inputs/outputs are latched by the command interface on the rising edge of
Chip Enable or Write Enable, whichever occurs first. Output Enable must remain High, VIH,
during the whole bus write operation. See Figure 10 and Figure 11, Write AC waveforms,
3.3
Output disable
The data inputs/outputs are in the high impedance state when Output Enable is High, VIH.
3.4
Standby
When Chip Enable is High, VIH, the memory enters standby mode and the data
inputs/outputs pins are placed in the high-impedance state. To reduce the supply current to
the standby supply current, ICC2, Chip Enable should be held within VCC ± 0.2 V. For the
standby current level see Table 11: DC characteristics.
During program or erase operations the memory will continue to use the program/erase
supply current, ICC3, for program or erase operations until the operation completes.
3.5
Automatic standby
If CMOS levels (VCC ± 0.2 V) are used to drive the bus and the bus is inactive for 150 ns or
more the memory enters automatic standby where the internal supply current is reduced to
the standby supply current, ICC2. The data inputs/outputs will still output data if a bus read
operation is in progress.
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相关代理商/技术参数 |
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|---|---|
| M29W800FT70D11 | 制造商:Micron Technology Inc 功能描述:PARALLEL NOR - Gel-pak, waffle pack, wafer, diced wafer on film |
| M29W800FT70N3E | 制造商:Micron Technology Inc 功能描述:IC FLASH 8MBIT 70NS 48TSOP |
| M29W800FT70N3F | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Tape and Reel |
| M29W800FT70N3F TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 8MBIT 70NS 48TSOP |
| M29W800FT70ZA3SE | 制造商:Micron Technology Inc 功能描述:AUTOMOTIVE - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 8MBIT 70NS 48TFBGA |
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