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参数资料
| 型号： | M50FLW080AN5G |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | PROM |
| 英文描述： | 1M X 8 FLASH 3V PROM, 11 ns, PDSO40 |
| 封装： | 10 X 20 MM, ROHS COMPLIANT, PLASTIC, TSOP-40 |
| 文件页数： | 18/64页 |
| 文件大小： | 534K |
| 代理商： | M50FLW080AN5G |
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M50FLW080A, M50FLW080B
Command interface
4
Command interface
All Bus Write operations to the device are interpreted by the Command Interface.
Commands consist of one or more sequential Bus Write operations. An internal
Program/Erase Controller handles all timings, and verifies the correct execution of the
Program and Erase commands. The Program/Erase Controller provides a Status Register
whose output may be read at any time to monitor the progress or the result of the operation.
The Command Interface reverts to the Read mode when power is first applied, or when
exiting from Reset. Command sequences must be followed exactly. Any invalid combination
of commands will be ignored. See Table 11 for the available Command Codes.
The following commands are the basic commands used to read from, write to, and configure
the device. The following text descriptions should be read in conjunction with Table 13.
4.1
Read Memory Array command
The Read Memory Array command returns the device to its Read mode, where it behaves
like a ROM or EPROM. One Bus Write cycle is required to issue the Read Memory Array
command and return the device to Read mode. Once the command is issued, the device
remains in Read mode until another command is issued. From Read mode, Bus Read
operations access the memory array.
If the Program/Erase Controller is executing a Program or Erase operation, the device will
not accept any Read Memory Array commands until the operation has completed.
For a multibyte read, in the FWH mode, the address, that was transmitted with the
command, will be automatically aligned, according to the MSIZE granularity. For example, if
MSIZE=7, regardless of any values that are provided for A6-A0, the first output will be from
the location for which A6-A0 are all ‘0’s.
Table 11.
Command codes
Hexa-decimal
Command
10h
Alternative Program Setup, Double/Quadruple Byte Program Setup, Chip
Erase Confirm
20h
Block Erase Setup
32h
Sector Erase Setup
40h
Program, Double/Quadruple Byte Program Setup
50h
Clear Status Register
70h
Read Status Register
80h
Chip Erase Setup
90h
Read Electronic Signature
B0h
Program/Erase Suspend
D0h
Program/Erase Resume, Block Erase Confirm, Sector Erase Confirm
FFh
Read Memory Array
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M50FLW080AN5P | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory |
| M50FLW080AN5T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory |
| M50FLW080AN5TG | 功能描述:IC FLASH 8MBIT 33MHZ 40TSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1,000 系列:- 格式 - 存储器:RAM 存储器类型:移动 SDRAM 存储容量:256M（8Mx32） 速度:133MHz 接口:并联 电源电压:1.7 V ~ 1.95 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:带卷 (TR) 其它名称:557-1327-2 |
| M50FLW080AN5TP | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory |
| M50FLW080ANB5 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8 Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory |
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