参数资料
型号: M58WR064EBZB
厂商: 意法半导体
英文描述: 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
中文描述: 64兆位4Mb的× 16,多银行,突发1.8V电源快闪记忆体
文件页数: 12/82页
文件大小: 1100K
代理商: M58WR064EBZB
2/82
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M58WR064ET 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR064ET10ZB6T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR064ET70ZB6T 功能描述:闪存 64M (4Mx16) 70ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
M58WR064ET80ZB6T 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
M58WR064ETZB 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory