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参数资料
| 型号： | M58WR064EBZB |
| 厂商： | 意法半导体 |
| 英文描述： | 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的× 16，多银行，突发1.8V电源快闪记忆体 |
| 文件页数： | 28/82页 |
| 文件大小： | 1100K |
| 代理商： | M58WR064EBZB |
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PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES
The Program and Erase times and the number of
Program/ Erase cycles per block are shown in Ta-
ble 14. In the M58WR064E the maximum number
of Program/ Erase cycles depends on the voltage
supply used.
Table 14. Program, Erase Times and Program, Erase Endurance Cycles
Note: 1. TA = –40 to 85°C; VDD = 1.65V to 2.2V; VDDQ = 1.65V to 3.3V.
2. The difference between Preprogrammed and not preprogrammed is not significant (30ms).
3. Excludes the time needed to execute the command sequence.
4. t.b.a. = to be announced
5. Measurements performed at 25°C. TA = 25°C ±5°C for Quadruple Word, Double Word and Quadruple Enhanced Factory Program.
Parameter
Condition
Min
Typ
Typical
after
100k W/E
Cycles
Max
Unit
V
PP
=
V
DD
Parameter Block (4 KWord) Erase(2)
0.3
1
2.5
s
Main Block (32 KWord) Erase
Preprogrammed
0.8
3
4
s
Not Preprogrammed
1.1
4
s
Bank (4Mbit) Erase
Preprogrammed
3
s
Not Preprogrammed
4.5
s
Parameter Block (4 KWord) Program(3)
40
ms
Main Block (32 KWord) Program(3)
300
ms
Word Program (3)
10
100
s
Program Suspend Latency
5
10
s
Erase Suspend Latency
5
20
s
Program/Erase Cycles (per Block)
Main Blocks
100,000
cycles
Parameter Blocks
100,000
cycles
V
PP
=
V
PP
H
Parameter Block (4 KWord) Erase
0.3
2.5
s
Main Block (32 KWord) Erase
0.9
4
s
Bank (4Mbit) Erase
3.5
s
Bank (4Mbit) Program (Quad-Enhanced Factory
Program)(5)
t.b.a.(4)
s
4Mbit Program
Quadruple Word(5)
510
ms
Word/ Double Word/ Quadruple Word Program(3, 5)
8
100
s
Parameter Block (4 KWord)
Program(3)
Quadruple Word(5)
8ms
Word
32
ms
Main Block (32 KWord) Program(3)
Quadruple Word(5)
64
ms
Word
256
ms
Program/Erase Cycles (per Block)
Main Blocks
1000
cycles
Parameter Blocks
2500
cycles
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M58WR064ET | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR064ET10ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR064ET70ZB6T | 功能描述:闪存 64M (4Mx16) 70ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M58WR064ET80ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR064ETZB | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
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