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参数资料
| 型号： | M58WR064EBZB |
| 厂商： | 意法半导体 |
| 英文描述： | 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| 中文描述： | 64兆位4Mb的× 16，多银行，突发1.8V电源快闪记忆体 |
| 文件页数： | 8/82页 |
| 文件大小： | 1100K |
| 代理商： | M58WR064EBZB |
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s
The second Bus Write cycle latches the block
address.
The lock status can be monitored for each block
using the Read Electronic Signature command.
Locked-Down blocks revert to the locked (and not
locked-down) state when the device is reset on
power-down. Table. 13 shows the Lock Status af-
ter issuing a Block Lock-Down command. Refer to
the section, Block Locking, for a detailed explana-
tions Flowchart and Pseudo Code, for a flowchart
for using the Lock-Down command.
Table 5. Standard Commands
Note: 1. X = Don’t Care, WA=Word Address in targeted bank, RD=Read Data, SRD=Status Register Data, ESD=Electronic Signature Data,
QD=Query Data, BA=Block Address, BKA= Bank Address, PD=Program Data, PRA=Protection Register Address, PRD=Protection
Register Data, CRD=Configuration Register Data.
2. Must be same bank as in the first cycle. The signature addresses are listed in Table 6.
3. Any address within the bank can be used.
Commands
Cy
c
le
s
Bus Operations
1st Cycle
2nd Cycle
Op.
Add
Data
Op.
Add
Data
Read Array
1+
Write
BKA
FFh
Read
WA
RD
Read Status Register
1+
Write
BKA
70h
Read
BKA(2)
SRD
Read Electronic Signature
1+
Write
BKA
90h
Read
BKA
(2)
ESD
Read CFI Query
1+
Write
BKA
98h
Read
BKA(2)
QD
Clear Status Register
1
Write
BKA
50h
Block Erase
2
Write
BKA or BA(3)
20h
Write
BA
D0h
Program
2
Write
BKA or WA
(3)
40h or 10h
Write
WA
PD
Program/Erase Suspend
1
Write
X
B0h
Program/Erase Resume
1
Write
X
D0h
Protection Register Program
2
Write
PRA
C0h
Write
PRA
PRD
Set Configuration Register
2
Write
CRD
60h
Write
CRD
03h
Block Lock
2
Write
BKA or BA(3)
60h
Write
BA
01h
Block Unlock
2
Write
BKA or BA(3)
60h
Write
BA
D0h
Block Lock-Down
2
Write
BKA or BA(3)
60h
Write
BA
2Fh
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M58WR064ET | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR064ET10ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR064ET70ZB6T | 功能描述:闪存 64M (4Mx16) 70ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| M58WR064ET80ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
| M58WR064ETZB | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory |
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