参数资料
型号: M58WR064EBZB
厂商: 意法半导体
英文描述: 64 Mbit 4Mb x 16, Multiple Bank, Burst 1.8V Supply Flash Memory
中文描述: 64兆位4Mb的× 16,多银行,突发1.8V电源快闪记忆体
文件页数: 68/82页
文件大小: 1100K
代理商: M58WR064EBZB
70/82
Figure 26. Erase Suspend & Resume Flowchart and Pseudo Code
Write 70h
AI06175
Read Status
Register
YES
NO
SR7 = 1
YES
NO
SR6 = 1
Erase Continues
Write D0h
Read data from
another block
or
Program/Protection Program
or
Block Protect/Unprotect/Lock
Start
Write B0h
Erase Complete
Write FFh
Read Data
Write FFh
erase_suspend_command ( ) {
writeToFlash (bank_address, 0xB0) ;
writeToFlash (bank_address, 0x70) ;
/* read status register to check if
erase has already completed */
do {
status_register=readFlash (bank_address) ;
/* E or G must be toggled*/
} while (status_register.SR7== 0) ;
if (status_register.SR6==0) /*erase completed */
{ writeToFlash (bank_address, 0xFF) ;
read_data ( ) ;
/*read data from another block*/
/*The device returns to Read Array
(as if program/erase suspend was not issued).*/
}
else
{ writeToFlash (bank_address, 0xFF) ;
read_program_data ( );
/*read or program data from another address*/
writeToFlash (bank_address, 0xD0) ;
/*write 0xD0 to resume erase*/
}
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