参数资料
型号: M59DR032F100N1T
厂商: NUMONYX
元件分类: PROM
英文描述: 2M X 16 FLASH 1.8V PROM, 100 ns, PDSO48
封装: 12 X 20 MM, PLASTIC, TSOP-48
文件页数: 13/38页
文件大小: 270K
代理商: M59DR032F100N1T
M59DR032A, M59DR032B
20/38
Table 22. DC Characteristics
(TA = 0 to 70°C or –40 to 85°C; VDD = VDDQ = 1.65V to 2.2V)
Note: 1. Sampled only, not 100% tested.
2. VPP may be connected to 12V power supply for a total of less than 100 hrs.
3. For standard program/erase operation VPP is don’t care.
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
ILI
Input Leakage Current
0V
≤ VIN ≤ VDD
±1
A
ILO
Output Leakage Current
0V
≤ VOUT ≤ VDD
±5
A
ICC1
Supply Current
(Read Mode)
E = VIL, G = VIH, f = 6MHz
10
20
mA
ICC2
Supply Current
(Power Down)
RP = VSS ± 0.2V
210
A
ICC3
Supply Current (Standby)
E = VDD ± 0.2V
15
50
A
ICC4
(1)
Supply Current
(Program or Erase)
Word Program, Block Erase
in progress
10
20
mA
ICC5
(1)
Supply Current
(Dual Bank)
Program/Erase in progress
in one Bank, Read in the
other Bank
20
40
mA
IPP1
VPP Supply Current
(Program or Erase)
VPP = 12V ± 0.6V
510
mA
IPP2
VPP Supply Current
(Standby or Read)
VPP ≤ VCC
0.2
5
A
VPP = 12V ± 0.6V
100
400
A
VIL
Input Low Voltage
–0.5
0.4
V
VIH
Input High Voltage
VDDQ –0.4
VDDQ + 0.4
V
VOL
Output Low Voltage
IOL = 100A
0.1
V
VOH
Output High Voltage
CMOS
IOH = –100A
VDDQ –0.1
V
VPP
(2,3)
VPP Supply Voltage
(Program or Erase)
–0.4
VDD + 0.4
V
Double Word Program
11.4
12.6
V
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