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参数资料
| 型号： | M59DR032F100N1T |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 2M X 16 FLASH 1.8V PROM, 100 ns, PDSO48 |
| 封装： | 12 X 20 MM, PLASTIC, TSOP-48 |
| 文件页数： | 7/38页 |
| 文件大小： | 270K |
| 代理商： | M59DR032F100N1T |
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M59DR032A, M59DR032B
Table 17. CFI Query System Interface Information
Offset
Data
Description
1Bh
0017h
VDD Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 millivolts
1Ch
0022h
VDD Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 millivolts
1Dh
0000h
VPP [Programming] Supply Minimum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 millivolts
Note: This value must be 0000h if no VPP pin is present
1Eh
00C0h
VPP [Programming] Supply Maximum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 millivolts
Note: This value must be 0000h if no VPP pin is present
1Fh
0004h
Typical timeout per single byte/word program (multi-byte program count = 1), 2n s
(if supported; 0000h = not supported)
20h
0000h
Typical timeout for maximum-size multi-byte program or page write, 2n s
(if supported; 0000h = not supported)
21h
000Ah
Typical timeout per individual block erase, 2n ms
(if supported; 0000h = not supported)
22h
0000h
Typical timeout for full chip erase, 2n ms
(if supported; 0000h = not supported)
23h
0004h
Maximum timeout for byte/word program, 2n times typical (offset 1Fh)
(0000h = not supported)
24h
0000h
Maximum timeout for multi-byte program or page write, 2n times typical (offset 20h)
(0000h = not supported)
25h
0004h
Maximum timeout per individual block erase, 2n times typical (offset 21h)
(0000h = not supported)
26h
0000h
Maximum timeout for chip erase, 2n times typical (offset 22h)
(0000h = not supported)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M59DR032F100N6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032F100ZB1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032F100ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032F120N1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032F120N6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
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