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参数资料
| 型号： | M59DR032F100N1T |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 2M X 16 FLASH 1.8V PROM, 100 ns, PDSO48 |
| 封装： | 12 X 20 MM, PLASTIC, TSOP-48 |
| 文件页数： | 8/38页 |
| 文件大小： | 270K |
| 代理商： | M59DR032F100N1T |
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M59DR032A, M59DR032B
16/38
Table 18. Device Geometry Definition
Offset Word
Mode
Data
Description
27h
0016h
Device Size = 2n in number of bytes
28h
0001h
Flash Device Interface Code description: Asynchronous x16
29h
0000h
2Ah
0000h
Maximum number of bytes in multi-byte program or page = 2n
2Bh
0000h
2Ch
0002h
Number of Erase Block Regions within device
bit 7 to 0 = x = number of Erase Block Regions
Note:1. x = 0 means no erase blocking, i.e. the device erases at once in "bulk."
2. x specifies the number of regions within the device containing one or more con-
tiguous Erase Blocks of the same size.
For example, a 128KB device (1Mb)
having blocking of 16KB, 8KB, four 2KB, two 16KB, and one 64KB is considered
to have 5 Erase Block Regions.
Even though two regions both contain 16KB
blocks, the fact that they are not contiguous means they are separate Erase
Block Regions.
3. By definition, symmetrically block devices have only one blocking region.
M59DR032A
M59DR032A Erase Block Region Information
bit 31 to 16 = z, where the Erase Block(s) within this Region are (z) times 256 bytes in
size. The value z = 0 is used for 128 byte block size.
e.g. for 64KB block size, z = 0100h = 256 => 256 * 256 = 64K
bit 15 to 0 = y, where y+1 = Number of Erase Blocks of identical size within the Erase
Block Region:
e.g.
y = D15-D0 = FFFFh => y+1 = 64K blocks [maximum number]
y = 0 means no blocking (# blocks = y+1 = "1 block")
Note: y = 0 value must be used with number of block regions of one as indicated
by (x) = 0
2Dh
003Eh
2Eh
0000h
2Fh
0000h
30h
0001h
31h
0007h
32h
0000h
33h
0020h
34h
0000h
M59DR032B
2Dh
0007h
2Eh
0000h
2Fh
0020h
30h
0000h
31h
003Eh
32h
0000h
33h
0000h
34h
0001h
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M59DR032F100N6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032F100ZB1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032F100ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032F120N1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032F120N6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
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