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参数资料
| 型号： | M59DR032F100N1T |
| 厂商： | NUMONYX |
| 元件分类： | PROM |
| 英文描述： | 2M X 16 FLASH 1.8V PROM, 100 ns, PDSO48 |
| 封装： | 12 X 20 MM, PLASTIC, TSOP-48 |
| 文件页数： | 15/38页 |
| 文件大小： | 270K |
| 代理商： | M59DR032F100N1T |
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M59DR032A, M59DR032B
22/38
Table 25. Read AC Characteristics
(TA = 0 to 70°C or –40 to 85°C; VDD = VDDQ = 1.65V to 2.2V)
Note: 1. Sampled only, not 100% tested.
2. G may be delayed by up to tELQV - tGLQV after the falling edge of E without increasing tELQV.
Symbol
Alt
Parameter
Test Condition
M59DR032
Unit
100
120
Min
Max
Min
Max
tAVAV
tRC
Address Valid to Next
Address Valid
E = VIL, G = VIL
100
120
ns
tAVQV
tACC
Address Valid to Output
Valid (Random)
E = VIL, G = VIL
100
120
ns
tAVQV1
tPAGE
Address Valid to Output
Valid (Page)
E = VIL, G = VIL
35
45
ns
tELQX
(1)
tLZ
Chip Enable Low to Output
Transition
G = VIL
00
ns
tELQV
(2)
tCE
Chip Enable Low to Output
Valid
G = VIL
100
120
ns
tGLQX
(1)
tOLZ
Output Enable Low to
Output Transition
E = VIL
00
ns
tGLQV
(2)
tOE
Output Enable Low to
Output Valid
E = VIL
25
35
ns
tEHQX
tOH
Chip Enable High to Output
Transition
G = VIL
00
ns
tEHQZ
(1)
tHZ
Chip Enable High to Output
Hi-Z
G = VIL
25
35
ns
tGHQX
tOH
Output Enable High to
Output Transition
E = VIL
00
ns
tGHQZ
(1)
tDF
Output Enable High to
Output Hi-Z
E = VIL
25
35
ns
tAXQX
tOH
Address Transition to
Output Transition
E = VIL, G = VIL
00
ns
tPHQ7V1
RP High to Data Valid
(Read Mode)
150
ns
tPHQ7V2
RP High to Data Valid
(Power Down enabled)
50
s
tPLQ7V
RP Low to Reset Complete
During Program/Erase
15
s
tPLPH
tRP
RP Pulse Width
100
ns
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相关代理商/技术参数 |
参数描述 |
|---|---|
| M59DR032F100N6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032F100ZB1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032F100ZB6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032F120N1T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
| M59DR032F120N6T | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory |
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