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| 型号： | MAX17007GTI+T |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 23/35页 |
| 文件大小： | 0K |
| 描述： | IC CTRLR QPWM GRAPHICS 28TQFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 系列： | Quick-PWM™ |
| 应用： | 电源 |
| 电流 - 电源： | 1.7mA |
| 电源电压： | 4.5 V ~ 26 V |
| 工作温度： | -40°C ~ 105°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 28-WFQFN 裸露焊盘 |
| 供应商设备封装： | 28-TQFN-EP（4x4） |
| 包装： | 带卷 (TR) |
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Dual and Combinable QPWM Graphics
Core Controllers for Notebook Computers
Valley Current-Limit Protection
The current-limit circuit employs a unique “valley” cur-
rent-sensing algorithm that senses the inductor current
across the output current-sense element —inductor
DCR or current-sense resistor, which generates a volt-
age between CSH_ and CSL_. If the current exceeds
the valley current-limit threshold during the low-side
MOSFET conduction time, the PWM controller is not
allowed to initiate a new cycle. The valley current-limit
threshold is set by the four-level ILIM_ pin, with selec-
table limits of 15mV, 30mV, 45mV, and 60mV.
The actual peak current is greater than the valley cur-
rent-limit threshold by an amount equal to the inductor
ripple current (Figure 7). Therefore, the exact current-
limit characteristic and maximum load capability are a
function of the inductor value and battery voltage.
When combined with the undervoltage protection cir-
cuit, this current-limit method is effective in almost
every circumstance. See Figure 8.
In forced-PWM mode, the MAX17007/MAX17008 also
implement a negative current limit to prevent excessive
reverse inductor currents when V OUT is sinking current.
The negative current-limit threshold is set to approxi-
mately 120% of the positive current limit.
In combined mode, ILIM1 sets the per-phase current
limit for both phases.
MOSFET Gate Drivers (DH, DL)
The DH and DL drivers are optimized for driving mod-
erate-sized high-side, and larger low-side power
MOSFETs. This is consistent with the low duty factor
seen in notebook applications, where a large V IN -
V OUT differential exists. The high-side gate driver (DH)
sources and sinks 1.2A, and the low-side gate driver
(DL) sources 1.0A and sinks 2.4A. This ensures robust
gate drive for high-current applications. The DH floating
high-side MOSFET driver is powered by internal boost
switch charge pumps at BST, while the DL synchro-
nous-rectifier driver is powered directly by the 5V bias
supply (V DD ).
CURRENT-
SENSE
GAIN
I PEAK
ILIM
QUAD-LEVEL
DECODE
VALLEY
CURRENT
( 2 LIR )
I LIM(VAL) = I LOAD(MAX) 1-
I LOAD
I LIMIT
CSH
CSL
LIMIT
ZERO
CROSSING
0
TIME
SKIP
Figure 7. “Valley” Current-Limit Threshold Point
Figure 8. Current-Limit Block Diagram
______________________________________________________________________________________
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MAX17008GTI+ | 功能描述:电压模式 PWM 控制器 QPWM Graphics Core Controller RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
| MAX17008GTI+T | 功能描述:电压模式 PWM 控制器 QPWM Graphics Core Controller RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
| MAX17009GTL+ | 功能描述:其他电源管理 AMD Dual-Phase CPU Controller RoHS:否 制造商:Texas Instruments 输出电压范围: 输出电流:4 mA 输入电压范围:3 V to 3.6 V 输入电流: 功率耗散: 工作温度范围:- 40 C to + 110 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-48 封装:Reel |
| MAX17009GTL+T | 功能描述:其他电源管理 AMD Dual-Phase CPU Controller RoHS:否 制造商:Texas Instruments 输出电压范围: 输出电流:4 mA 输入电压范围:3 V to 3.6 V 输入电流: 功率耗散: 工作温度范围:- 40 C to + 110 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-48 封装:Reel |
| MAX1700EEE | 功能描述:直流/直流开关转换器 1-3 Cell 1A Step-Up DC/DC Converters RoHS:否 制造商:STMicroelectronics 最大输入电压:4.5 V 开关频率:1.5 MHz 输出电压:4.6 V 输出电流:250 mA 输出端数量:2 最大工作温度:+ 85 C 安装风格:SMD/SMT |
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