参数资料
型号: MAX5073ETI+T
厂商: Maxim Integrated Products
文件页数: 9/25页
文件大小: 0K
描述: IC REG BUCK BST ADJ 1A/2A 28TQFN
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 2,500
类型: 降压(降压),升压(升压)
输出类型: 可调式
输出数: 2
输出电压: 0.8 V ~ 28 V
输入电压: 4.5 V ~ 23 V
PWM 型: 电压模式
频率 - 开关: 200kHz ~ 2.2MHz
电流 - 输出: 1A,2A
同步整流器:
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 28-WFQFN 裸露焊盘
包装: 带卷 (TR)
供应商设备封装: 28-TQFN-EP(5x5)
2.2MHz, Dual-Output Buck or Boost Converter
with Internal Power MOSFETs
Pin Description (continued)
PIN
10
11
12, 13
14
15
16
17
18, 19
20
21
22
23, 24
25
26
27, 28
EP
NAME
OSC
V+
VL
BYPASS
COMP1
FB1
EN1
DRAIN1
BST1/VDD1
PGOOD1
PGOOD2
SOURCE1
SGND
PGND
SOURCE2
SGND
FUNCTION
Oscillator Frequency Set Input. Connect a resistor from OSC to SGND (R OSC ) to set the switching
frequency (see the Oscillator section). Set R OSC for equal to or lower oscillator frequency than the SYNC
input frequency when using external synchronization (0.2f SYNC < f OSC < 1.2f SYNC ). R OSC is still required
when an external clock is connected to the SYNC input.
Input Supply Voltage. V+ voltage range from 5.5V to 23V. Connect the V+ and VL together for 4.5V to
5.5V input operation. Bypass with a minimum 0.1μF ceramic capacitor to SGND.
Internal 5.2V Linear Regulator Output. Use VL to drive the high-side switch at BST1/VDD1 and
BST2/VDD2. Bypass VL with a 0.1μF capacitor to PGND and a 4.7μF ceramic capacitor to SGND.
2.0V Output. Bypass to SGND with a 0.22μF or greater ceramic capacitor.
Compensation Connection for Converter 1 (See the Compensation Section)
Feedback Input for Converter 1. Connect FB1 to a resistive divider between converter 1’s output and SGND
to program the output voltage. To set the output voltage below 0.8V, connect FB1 to a resistive voltage-
divider from BYPASS to regulator 1’s output (Figure 5). See the Setting the Output Voltage section.
Active-High Enable Input for Converter 1. Drive EN1 low to shut down converter 1, drive EN1 high for normal
operation. Use EN1 in conjunction with EN2 for supply sequencing. Connect to VL for always-on operation.
Connection to the Converter 1 Internal MOSFET Drain.
Buck converter operation—use the MOSFET as a high-side switch and connect DRAIN1 to the input supply.
Boost converter operation—use the MOSFET as a low-side switch and connect DRAIN1 to the inductor
and diode junction.
Buck Converter Operation—Bootstrap Flying-Capacitor Connection for Converter 1. Connect BST1/VDD1
to an external ceramic capacitor and diode according to the Standard Application Circuit (Figure 1).
Boost Converter Operation—Driver Bypass Capacitor Connection. Connect a low-ESR 0.1μF ceramic
capacitor from BST1/VDD1 to PGND.
Converter 1 Power-Good Output. Open-drain output goes low when converter 1’s output falls below
92.5% of its set regulation voltage. Use PGOOD1, PGOOD2, EN1, and EN2 to sequence the converters.
Converter 2 Power-Good Output. Open-drain output goes low when converter 2’s output falls below
92.5% of its set regulation voltage.
Connection to the Converter 1 Internal MOSFET Source.
Buck converter operation—connect SOURCE1 to the switched side of the inductor as shown in Figure 1.
Boost converter operation—connect SOURCE1 to PGND.
Signal Ground. Connect SGND to the exposed pad. Connect SGND and PGND together at a single point.
Power Ground. Connect rectifier diode anode, input capacitor negative, output capacitor negative, and
VL bypass capacitor returns to PGND.
Connection to the Converter 2 Internal MOSFET Source.
Buck converter operation—connect SOURCE2 to the switched side of the inductor as shown in Figure 1.
Boost converter operation—connect SOURCE2 to PGND (Figure 8).
Exposed Paddle. Connect to SGND. Solder EP to the SGND plane for better thermal performance.
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9
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