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参数资料
| 型号： | MB85317A-60 |
| 厂商： | Fujitsu Limited |
| 英文描述： | CMOS 4M×72Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×72位 同步动态RAM) |
| 中文描述： | 4米× 72Bit的CMOS同步动态随机存取存储器（SDRAM）的CMOS（4分× 72位同步动态RAM）的 |
| 文件页数： | 1/13页 |
| 文件大小： | 201K |
| 代理商： | MB85317A-60 |
1
DS05-11204-1E
FUJITSU SEMICONDUCTOR
DATA SHEET
MEMORY
CMOS 4M
FAST PAGE MODE DRAM MODULE
×
72 Bit
MB85317A-60/-70
CMOS 4M
×
72 Bit Fast Page Mode DRAM Module
I
DESCRIPTION
The Fujitsu MB85317A is a fully decoded, CMOS Dynamic Random Access Memory (DRAM) module consisting
of eighteen MB8116400A devices. The MB85317A is optimized for those applications requiring high speed, high
performance and large memory storage. The operation and electrical characteristics of the MB85317A are the
same as the MB8116400A which features fast page mode operation. For ease of memory expansion, the
MB85317A is offered in an 168-pad Dual In-line Memory Module package (DIMM).
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ABSOLUTE MAXIMUM RATINGS (See NOTE.)
NOTE:
Permanent device damage may occur if the above
operation should be restricted to the conditions as detailed in the operational sections of this data sheet.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Absolute Maximum Ratings
are exceeded. Functional
Parameter
Symbol
V
CC
V
V
OUT
I
OUT
P
T
STG
Value
Unit
V
V
V
mA
W
°
C
Supply Voltage
Input Voltage
Output Voltage
Short Circuit Output Current
Power Dissipation
Storage Temperature
–0.5 to +7.0
–0.5 to +7.0
–0.5 to +7.0
50
20
–55 to +125
IN
D
This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be
taken to avoid application of any voltage higher than maximum rated voltages to this high impedance circuit.
相关PDF资料 |
PDF描述 |
|---|---|
| MB85317A-70 | CMOS 4M×72Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×73位 同步动态RAM) |
| MB85341C-60 | CMOS 1M×32 BIT Hyper Page Mode DRAM Module(CMOS 1M×32位超级页面存取模式动态RAM模块) |
| MB85341C-70 | CMOS 1M×32 BIT Hyper Page Mode DRAM Module(CMOS 1M×32位超级页面存取模式动态RAM模块) |
| MB85342C-60 | CMOS 2M×32 BIT Hyper Page Mode DRAM Module(CMOS 2M×32位超级页面存取模式动态RAM模块) |
| MB85342C-70 | CMOS 2M×32 BIT Hyper Page Mode DRAM Module(CMOS 2M×32位超级页面存取模式动态RAM模块) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MB85AS4MTPF-G-BCERE1 | 功能描述:IC RERAM 4MBIT 5MHZ 8SOP 制造商:fujitsu electronics america, inc. 系列:- 包装:剪切带（CT） 零件状态:在售 存储器类型:非易失 存储器格式:RAM 技术:ReRAM（电阻式 RAM） 存储容量:4Mb （512K x 8） 时钟频率:5MHz 写周期时间 - 字，页:17ms 存储器接口:SPI 电压 - 电源:1.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C（TA） 安装类型:表面贴装 封装/外壳:8-SOIC（0.209"，5.30mm 宽） 供应商器件封装:8-SOP 标准包装:1 |
| MB85R1001 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:1 M Bit (128 K 】 8) |
| MB85R1001_08 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:1 M Bit (128 K 】 8) |
| MB85R1001_09 | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (128 K × 8) |
| MB85R1001A | 制造商:FUJITSU 制造商全称:Fujitsu Component Limited. 功能描述:Memory FRAM CMOS 1 M Bit (128 K x 8) |
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