参数资料
型号: MB85317A-60
厂商: Fujitsu Limited
英文描述: CMOS 4M×72Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×72位 同步动态RAM)
中文描述: 4米× 72Bit的CMOS同步动态随机存取存储器(SDRAM)的CMOS(4分× 72位同步动态RAM)的
文件页数: 8/13页
文件大小: 201K
代理商: MB85317A-60
8
MB85317A-60/MB85317A-70
I
AC CHARACTERISTICS
(At recommended operating conditions unless otherwise noted.) Notes 1, 2, 3
No.
Parameter
Symbol
MB85317A-60
MB85317A-70
Unit
Notes
Min.
Max.
Min.
Max.
1
Time Between Refresh
t
REF
65.6
65.6
ms
2
Random Read/Write Cycle Time
t
RC
110
130
ns
3
Read-Modify-Write CycleTime
t
RWC
150
174
ns
4
Access Time from RAS
t
RAC
60
70
ns
4,7
5
Access Time from CAS
t
CAC
20
22
ns
5,7
6
Column Address Access Time
t
AA
35
40
ns
6,7
7
Output Hold Time
t
OH
5
5
ns
8
Output Buffer Turn On
DelayTime
t
ON
2
2
ns
9
Output Buffer Turn Off Delay
Time
t
OFF
20
22
ns
8
10 Transition Time
t
T
2
16
2
16
ns
11 RAS Precharge Time
t
RP
40
50
ns
12 RAS Pulse Width
t
RAS
60
100000
70
100000
ns
13 RAS Hold Time
t
RSH
20
22
ns
14 CAS to RAS Precharge Time
t
CRP
5
5
ns
15 RAS to CAS Delay Time
t
RCD
18
40
18
48
ns
9,10
16 CAS Pulse Width
t
CAS
15
17
ns
17 CAS Hold Time
t
CSH
58
68
ns
18
CAS Precharge Time (C-B-R
Refresh)
t
CPN
10
10
nss
17
19 Row Address Setup Time
t
ASR
5
5
ns
20 Row Address Hold Time
t
RAH
8
8
ns
21 Column Address Setup Time
t
ASC
0
0
ns
22 Column Address Hold Time
t
CAH
15
15
ns
23
Column Address Hold Time from
RAS
t
AR
33
33
ns
24
RAS to Column Address Delay
Time
t
RAD
13
25
13
30
ns
11
25
Column Address to RAS Lead
Time
t
RAL
35
40
ns
26
Column Address to CAS Lead
Time
t
CAL
30
35
ns
27 Read Command Setup Time
t
RCS
0
0
ns
28
Read Command Hold Time
Referenced to RAS
t
RRH
–2
–2
ns
12
29
Read Command Hold Time
Referenced to CAS
t
RCH
0
0
ns
12
相关PDF资料
PDF描述
MB85317A-70 CMOS 4M×72Bit Synchronous Dynamic Random Access Memory (SDRAM)(CMOS 4M×73位 同步动态RAM)
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