参数资料
型号: MC56F8322VFAER2
厂商: Freescale Semiconductor
文件页数: 6/136页
文件大小: 0K
描述: IC HYBRID CTRLR 16BIT 48-LQFP
标准包装: 2,000
系列: 56F8xxx
核心处理器: 56800E
芯体尺寸: 16-位
速度: 60MHz
连通性: CAN,SCI,SPI
外围设备: POR,PWM,温度传感器,WDT
输入/输出数: 21
程序存储器容量: 40KB(20K x 16)
程序存储器类型: 闪存
RAM 容量: 6K x 16
电压 - 电源 (Vcc/Vdd): 2.25 V ~ 3.6 V
数据转换器: A/D 6x12b
振荡器型: 内部
工作温度: -40°C ~ 105°C
封装/外壳: 48-LQFP
包装: 带卷 (TR)
配用: MC56F8323EVME-ND - BOARD EVALUATION MC56F8323
General Characteristics
56F8322 Technical Data, Rev. 16
Freescale Semiconductor
103
Preliminary
1. Theta-JA determined on 2s2p test boards is frequently lower than would be observed in an application. Determined on 2s2p ther-
mal test board.
2. Junction to ambient thermal resistance, Theta-JA (RqJA ), was simulated to be equivalent to the JEDEC specification JESD51-2
in a horizontal configuration in natural convection. Theta-JA was also simulated on a thermal test board with two internal planes
(2s2p, where “s” is the number of signal layers and “p” is the number of planes) per JESD51-6 and JESD51-7. The correct name
for Theta-JA for forced convection or with the non-single layer boards is Theta-JMA.
3. Junction to case thermal resistance, Theta-JC (RqJC ), was simulated to be equivalent to the measured values using the cold
plate technique with the cold plate temperature used as the "case" temperature. The basic cold plate measurement technique is
described by MIL-STD 883D, Method 1012.1. This is the correct thermal metric to use to calculate thermal performance when
the package is being used with a heat sink.
4. Thermal Characterization Parameter, Psi-JT (YJT ), is the "resistance" from junction to reference point thermocouple on top cen-
ter of case as defined in JESD51-2. YJT is a useful value to use to estimate junction temperature in steady-state customer envi-
ronments.
5. Junction temperature is a function of on-chip power dissipation, package thermal resistance, mounting site (board) temperature,
ambient temperature, air flow, power dissipation of other components on the board, and board thermal resistance.
6. See Section 12.1 for more details on thermal design considerations.
7. TJ = Junction temperature
TA = Ambient temperature
Table 10-2 56F8322/56F8122 ElectroStatic Discharge (ESD) Protection
Characteristic
Min
Typ
Max
Unit
ESD for Human Body Model (HBM)
2000
V
ESD for Machine Model (MM)
200
V
ESD for Charge Device Model (CDM)
500
V
Table 10-3 Thermal Characteristics6
Characteristic
Comments
Symbol
Value
Unit
Notes
48-pin LQFP
Junction to ambient
Natural Convection
RθJA
41
°C/W
2
Junction to ambient (@1m/sec)
RθJMA
34
°C/W
2
Junction to ambient
Natural Convection
Four layer board
(2s2p)
RθJMA
(2s2p)
34
°C/W
1,2
Junction to ambient (@1m/sec)
Four layer board
(2s2p)
RθJMA
29
°C/W
1,2
Junction to case
RθJC
8°C/W
3
Junction to center of case
Ψ
JT
2°C/W
4, 5
I/O pin power dissipation
P I/O
User-determined
W
Power dissipation
P D
P D = (IDD x VDD + P I/O)W
Maximum allowed PD
PDMAX
(TJ - TA) / R
θJA7
W
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