参数资料
型号: MC56F8323VFBE
厂商: Freescale Semiconductor
文件页数: 36/140页
文件大小: 0K
描述: IC MPU HYBRID DSP 32K 64-LQFP
标准包装: 160
系列: 56F8xxx
核心处理器: 56800E
芯体尺寸: 16-位
速度: 60MHz
连通性: CAN,SCI,SPI
外围设备: POR,PWM,温度传感器,WDT
输入/输出数: 27
程序存储器容量: 32KB(16K x 16)
程序存储器类型: 闪存
RAM 容量: 12K x 8
电压 - 电源 (Vcc/Vdd): 2.25 V ~ 3.6 V
数据转换器: A/D 8x12b
振荡器型: 内部
工作温度: -40°C ~ 105°C
封装/外壳: 64-LQFP
包装: 托盘
配用: MC56F8323EVME-ND - BOARD EVALUATION MC56F8323
56F8323 Technical Data, Rev. 17
130
Freescale Semiconductor
Preliminary
C, the internal [dynamic component], is classic C*V2*F CMOS power dissipation corresponding to the
56800E core and standard cell logic.
D, the external [dynamic component], reflects power dissipated on-chip as a result of capacitive loading
on the external pins of the chip. This is also commonly described as C*V2*F, although simulations on two
of the IO cell types used on the 56800E reveal that the power-versus-load curve does have a non-zero
Y-intercept.
Power due to capacitive loading on output pins is (first order) a function of the capacitive load and
frequency at which the outputs change. Table 10-25 provides coefficients for calculating power dissipated
in the IO cells as a function of capacitive load. In these cases:
TotalPower =
Σ((Intercept + Slope*Cload)*frequency/10MHz)
where:
Summation is performed over all output pins with capacitive loads
TotalPower is expressed in mW
Cload is expressed in pF
Because of the low duty cycle on most device pins, power dissipation due to capacitive loads was found
to be fairly low when averaged over a period of time.
E, the external [static component], reflects the effects of placing resistive loads on the outputs of the
device. Sum the total of all V2/R or IV to arrive at the resistive load contribution to power. Assume V =
0.5 for the purposes of these rough calculations. For instance, if there is a total of eight PWM outputs
driving 10mA into LEDs, then P = 8*.5*.01 = 40mW.
In previous discussions, power consumption due to parasitics associated with pure input pins is ignored,
as it is assumed to be negligible.
Table 10-25 IO Loading Coefficients at 10MHz
Intercept
Slope
8mA CMOS 3-State Output Pad with Input-Enabled Pull-Up
1.3
0.11mW / pF
4mA CMOS 3-State Output Pad with Input-Enabled Pull-Up
1.15mW
0.11mW / pF
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