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参数资料
型号： MM908E621
厂商： 飞思卡尔半导体(中国)有限公司
英文描述： Integrated Quad Half-Bridge and Triple High-Side with Embedded MCU and LIN for High End Mirror
中文描述： 综合四半桥和三高的嵌入式微控制器和LIN高端侧镜
文件页数： 4/62页
文件大小： 719K
代理商： MM908E621
Analog Integrated Circuit Device Data
12
Freescale Semiconductor
908E621
Static Electrical Characteristics
Half-Bridge Outputs HB1 and HB2
Switch On Resistance
High-Side, TJ = 25°C, ILOAD = 1.0 A
Low-Side, TJ = 25°C, ILOAD = 1.0 A
RDS(ON)-HB12
–
750
900
m
Overcurrent Shutdown
High-Side
Low-Side
IHBOC12
1.0
–
1.5
A
Overcurrent Shutdown blanking time (18)
tOCB
–4-8
–
s
Switching Frequency (18)
fPWM
––
25
kHz
Free-Wheeling Diode Forward Voltage
High-Side, TJ = 25°C, ILOAD = 1.0 A
Low-Side, TJ = 25°C, ILOAD = 1.0 A
VHSF
VLSF
–
0.9
–
V
Leakage Current
ILeakHB
–<0.2
10
A
Low-Side Current to Voltage Ratio (19)
VADOUT [V] / IHB [A], CSA = 1, (measured and trimmed IHB = 200 mA)
VADOUT [V] / IHB [A], CSA = 0, (measured and trimmed IHB = 500 mA)
CRRATIOHB12
17.5
3.5
25.0
5.0
32.5
6.5
V/A
Half-Bridge Outputs HB3 and HB4
Switch On Resistance
High-Side, TJ = 25°C, ILOAD = 1.0 A
Low-Side, TJ = 25°C, ILOAD = 1.0 A
RDS(ON)-HB34
–
275
325
m
Overcurrent Shutdown
High-Side
Low-Side
IHBOC34
4.8
–
7.2
A
Overcurrent Shutdown blanking time (18)
tOCB
–4-8
–
s
Switching Frequency (18)
fPWM
––
25
kHz
Free-Wheeling Diode Forward Voltage
High-Side, TJ = 25°C, ILOAD = 1.0 A
Low-Side, TJ = 25°C, ILOAD = 1.0 A
VHSF
VLSF
–
0.9
–
V
Leakage Current
ILeakHB
–<0.2
10
A
Low-Side Current to Voltage Ratio (19)
VADOUT [V] / IHB [A], CSA = 1, (measured and trimmed IHB = 500 mA)
VADOUT [V] / IHB [A], CSA = 0, (measured and trimmed IHB = 2 A)
CRRATIOHB34
3.5
0.7
5.0
1.0
6.5
1.3
V/A
Notes
18.
This parameter is guaranteed by process monitoring but is not production tested.
19.
This parameter is guaranteed only if correct trimming was applied
Table 3. Static Electrical Characteristics (continued)
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
chip. Characteristics noted under conditions 9.0 V ≤ VSUP ≤ 16 V, -40°C ≤ TJ ≤ 125°C unless otherwise noted. Typical values
noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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相关代理商/技术参数
参数描述
MM908E621_08 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Integrated Quad Half-bridge and Triple High Side with Embedded MCU and LIN for High End Mirror
MM908E621ACDWB 功能描述:8位微控制器 -MCU QUAD H-B/3-HS W/MCU & LI RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
MM908E621ACDWB/R2 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Integrated Quad Half-bridge and Triple High Side with Embedded MCU and LIN for High End Mirror
MM908E621ACDWBR2 功能描述:8位微控制器 -MCU QUAD HB / TRIPLE HS 841B RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
MM908E621ACPEK 功能描述:8位微控制器 -MCU QUAD H-B/3-HS W/MCU & LI RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
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