参数资料
型号: MM908E625ACEK
厂商: Freescale Semiconductor
文件页数: 45/49页
文件大小: 0K
描述: IC HALF-BRIDGE QUAD 54-SOIC
标准包装: 26
应用: 自动镜像控制
核心处理器: HC08
程序存储器类型: 闪存(16 kB)
控制器系列: 908E
RAM 容量: 512 x 8
接口: SCI,SPI
输入/输出数: 13
电源电压: 8 V ~ 18 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 54-BSSOP(0.295",7.50mm 宽)裸露焊盘
包装: 管件
供应商设备封装: 54-SOICW-EP
Analog Integrated Circuit Device Data
Freescale Semiconductor
5
908E625
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Table 2. Maximum Ratings
All voltages are with respect to ground unless otherwise noted. Exceeding these ratings may cause a malfunction or
permanent damage to the device.
Ratings
Symbol
Value
Unit
ELECTRICAL RATINGS
Supply Voltage
Analog Chip Supply Voltage under Normal Operation, Steady State
Analog Chip Supply Voltage under Transient Conditions (1)
Microcontroller Chip Supply Voltage
VSUP(SS)
VSUP(PK)
VDD
-0.3 to 28
-0.3 to 40
-0.3 to 6.0
V
Input Pin Voltage
Analog Chip
Microcontroller Chip
VIN(ANALOG)
VIN(MCU)
-0.3 to 5.5
VSS-0.3 to VDD+0.3
V
Maximum Microcontroller Current per Pin
All Pins Except VDD, VSS, PTA0:PTA6, PTC0:PTC1
Pins PTA0:PTA6, PTC0:PTC1
IPIN(1)
IPIN(2)
±15
±25
mA
Maximum Microcontroller VSS Output Current
IMVSS
100
mA
Maximum Microcontroller VDD Input Current
IMVDD
100
mA
LIN Supply Voltage
Normal Operation (Steady-State)
Transient Conditions (1)
VBUS(SS)
VBUS(DYNAMIC)
-18 to 28
40
V
ESD Voltage
Human Body Model (HBM)(2)
Machine Model (MM)(3)
Charge Device Model (CDM)(4)
VESD
±3000
±150
±500
V
THERMAL RATINGS
Storage Temperature
TSTG
-40 to 150
°C
Ambient Operating Temperature
TA
-40 to 85
°C
Operating Case Temperature (5)
TC
-40 to 85
°C
Operating Junction Temperature(6)
TJ
-40 to 125
°C
Peak Package Reflow Temperature During Reflow(7)(8)
TPPRT
°C
Notes
1.
Transient capability for pulses with a time of t < 0.5 sec.
2.
ESD voltage testing is performed in accordance with the Human Body Model (CZAP = 100 pF, RZAP = 1500 Ω)
3.
ESD voltage testing is performed in accordance with the Machine Model (CZAP =200 pF, RZAP =0 Ω)
4.
ESD voltage testing is performed in accordance with Charge Device Model, robotic (CZAP =4.0 pF).
5.
The limiting factor is junction temperature, taking into account the power dissipation, thermal resistance, and heat sinking.
6.
The temperature of analog and MCU die is strongly linked via the package, but can differ in dynamic load conditions, usually because
of higher power dissipation on the analog die. The analog die temperature must not exceed 150 °C under these conditions.
7.
Pin soldering temperature is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may cause
malfunction or permanent damage to the device.
8.
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