参数资料
型号: MM908E625ACEK
厂商: Freescale Semiconductor
文件页数: 47/49页
文件大小: 0K
描述: IC HALF-BRIDGE QUAD 54-SOIC
标准包装: 26
应用: 自动镜像控制
核心处理器: HC08
程序存储器类型: 闪存(16 kB)
控制器系列: 908E
RAM 容量: 512 x 8
接口: SCI,SPI
输入/输出数: 13
电源电压: 8 V ~ 18 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 54-BSSOP(0.295",7.50mm 宽)裸露焊盘
包装: 管件
供应商设备封装: 54-SOICW-EP
Analog Integrated Circuit Device Data
Freescale Semiconductor
7
908E625
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
SYSTEM RESETS AND INTERRUPTS
High Voltage Reset
Threshold
Hysteresis
VHVRON
VHVRH
27
30
1.5
33
V
Low Voltage Reset
Threshold
Hysteresis
VLVRON
VLVRH
3.6
4.0
100
4.5
V
mV
High Voltage Interrupt
Threshold
Hysteresis
VHVION
VHVIH
17.5
21
1.0
23
V
Low Voltage Interrupt
Threshold
Hysteresis
VLVION
VLVIH
6.5
0.4
8.0
V
High Temperature Reset (11)
Threshold
Hysteresis
TRON
TRH
5.0
170
°C
High Temperature Interrupt (12)
Threshold
Hysteresis
TION
TIH
5.0
160
°C
VOLTAGE REGULATOR
Normal Mode Output Voltage
IOUT = 60 mA, 6.0 V < VSUP < 18 V
VDDRUN
4.75
5.0
5.25
V
Load Regulation
IOUT = 80 mA, VSUP = 9.0 V, TJ = 125°C
VLR
100
mV
Stop Mode Output Voltage (Maximum Output Current 100
μA)
VDDSTOP
4.45
4.7
5.0
V
LIN PHYSICAL LAYER
Output Low Level
TXD LOW, 500
Ω Pull-up to VSUP
VLIN-LOW
1.4
V
Output High Level
TXD HIGH, IOUT = 1.0 μA
VLIN-HIGH
VSUP -1.0
V
Pullup Resistor to VSUP
RSLAVE
20
30
60
k
Ω
Leakage Current to GND
Recessive State (-0.5 V < VLIN < VSUP)
IBUS_PAS_rec
0.0
20
μA
Leakage Current to GND (VSUP Disconnected)
Including Internal Pull-up Resistor, VLIN @ -18 V
Including Internal Pull-up Resistor, VLIN @ +18 V
IBUS_NO_GND
IBUS
-600
25
μA
Notes
11.
This parameter is guaranteed by process monitoring but is not production tested.
12.
High Temperature Interrupt (HTI) threshold is linked to High Temperature Reset (HTR) threshold (HTR = HTI + 10
°C).
Table 3. Static Electrical Characteristics (continued)
All characteristics are for the analog chip only. Refer to the 68HC908EY16 specification for characteristics of the
microcontroller chip. Characteristics noted under conditions 9.0 V
≤ VSUP ≤ 16 V, -40 °C ≤ TJ ≤ 125 °C, unless otherwise noted.
Typical values noted reflect the approximate parameter mean at TA = 25 °C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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