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参数资料
| 型号： | MMBT6427LT3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封装： | PLASTIC, CASE 318-08, 3 PIN |
| 文件页数： | 24/25页 |
| 文件大小： | 381K |
| 代理商： | MMBT6427LT3 |
6–3
Tape and Reel Specifications
Motorola Small–Signal Transistors, FETs and Diodes Device Data
EMBOSSED TAPE AND REEL DATA FOR DISCRETES
CARRIER TAPE SPECIFICATIONS
P0
K
t
B1
K0
Top Cover
Tape
Embossment
User Direction of Feed
Center Lines
of Cavity
D
P2
10 Pitches Cumulative Tolerance on Tape
± 0.2 mm
(
± 0.008″)
E
F
W
P
B0
A0
D1
For Components
2.0 mm x 1.2 mm and Larger
* Top Cover Tape
Thickness (t1)
0.10 mm
(.004
″) Max.
Embossment
Embossed Carrier
R Min
Bending Radius
Maximum Component Rotation
Typical Component
Cavity Center Line
Typical Component
Center Line
100 mm
(3.937
″)
250 mm
(9.843
″)
1 mm
(.039
″) Max
1 mm Max
10
°
Tape and Components
Shall Pass Around Radius “R”
Without Damage
Tape
For Machine Reference Only
Including Draft and RADII
Concentric Around B0
Camber (Top View)
Allowable Camber To Be 1 mm/100 mm Nonaccumulative Over 250 mm
See
Note 1
Bar Code Label
DIMENSIONS
Tape
Size
B1 Max
D
D1
E
F
K
P0
P2
R Min
T Max
W Max
8mm
4.55 mm
(.179
″)
1.5 +0.1mm
– 0.0
( 0 9 + 004
1.0 Min
(.039
″)
1.75
± 0.1mm
(.069
± .004″)
3.5
± 0.05 mm
(.138
± .002″)
2.4 mm Max
(.094
″)
4.0
± 0.1mm
(.157
± .004″)
2.0
± 0.1mm
(.079
± .002″)
25 mm
(.98
″)
0.6mm
(.024
″)
8.3 mm
(.327
″)
12 mm
8.2 mm
(.323
″)
(.059+ .004
″
– 0.0)
1.5 mm Min
(.060
″)
5.5
± 0.05 mm
(.217
± .002″)
6.4 mm Max
(.252
″)
30 mm
(1.18
″)
12
± .30 mm
(.470
± .012″)
16 mm
12.1 mm
(.476
″)
7.5
± 0.10 mm
(.295
± .004″)
7.9 mm Max
(.311
″)
16.3 mm
(.642
″)
24 mm
20.1 mm
(.791
″)
11.5
± 0.1 mm
(.453
± .004″)
11.9 mm Max
(.468
″)
24.3 mm
(.957
″)
Metric dimensions govern — English are in parentheses for reference only.
NOTE 1: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within .05 mm min. to .50 mm max.,
NOTE 1: the component cannot rotate more than 10
° within the determined cavity.
NOTE 2: If B1 exceeds 4.2 mm (.165) for 8 mm embossed tape, the tape may not feed through all tape feeders.
NOTE 3: Pitch information is contained in the Embossed Tape and Reel Ordering Information on pg. 5.12–3.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MMBT6427LT3G | 功能描述:TRANS DARL NPN 40V 500MA SOT-23 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)（最大）:1A 电压 - 集电极发射极击穿（最大）:30V Ib、Ic条件下的Vce饱和度（最大）:200mV @ 100mA，1A 电流 - 集电极截止（最大）:100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3，SC-59，SOT-23-3 供应商设备封装:SOT-23-3（TO-236） 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR |
| MMBT6428 | 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT6428 | 制造商:Fairchild Semiconductor Corporation 功能描述:Bipolar Transistor |
| MMBT6428_Q | 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
| MMBT6428LT1 | 功能描述:两极晶体管 - BJT 200mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2 |
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