参数资料
型号: MMBT6427LT3
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
封装: PLASTIC, CASE 318-08, 3 PIN
文件页数: 4/25页
文件大小: 381K
代理商: MMBT6427LT3
6–7
Packaging Specifications
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TO–92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL
ADHESIVE TAPE ON
TOP SIDE
FLAT SIDE
CARRIER
STRIP
FLAT SIDE OF TRANSISTOR
AND ADHESIVE TAPE VISIBLE.
ADHESIVE TAPE ON
TOP SIDE
ROUNDED SIDE
CARRIER
STRIP
ROUNDED SIDE OF TRANSISTOR AND
ADHESIVE TAPE VISIBLE.
252 mm
9.92”
58 mm
2.28”
MAX
13”
MAX
330 mm
Style M fan fold box is equivalent to styles E and F of
reel pack dependent on feed orientation from box.
Style P fan fold box is equivalent to styles A and B of
reel pack dependent on feed orientation from box.
100 GRAM
PULL FORCE
16 mm
HOLDING
FIXTURE
HOLDING
FIXTURE
HOLDING
FIXTURE
16 mm
70 GRAM
PULL FORCE
500 GRAM PULL FORCE
The component shall not pull free with a 300 gram
load applied to the leads for 3
± 1 second.
The component shall not pull free with a 70 gram
load applied to the leads for 3
± 1 second.
There shall be no deviation in the leads and
no component leads shall be pulled free of
the tape with a 500 gram load applied to the
component body for 3
± 1 second.
Figure 2. Style M
Figure 3. Style P
Figure 4. Fan Fold Box Dimensions
Figure 5. Test #1
Figure 6. Test #2
Figure 7. Test #3
ADHESION PULL TESTS
FAN FOLD BOX STYLES
相关PDF资料
PDF描述
MMBT918D87Z VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
MMBT918LT3 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB
MMBTA13LT3 300 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBTA20LT3 100 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBTA56D87Z 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
相关代理商/技术参数
参数描述
MMBT6427LT3G 功能描述:TRANS DARL NPN 40V 500MA SOT-23 RoHS:是 类别:分离式半导体产品 >> 晶体管(BJT) - 单路 系列:- 标准包装:1 系列:- 晶体管类型:NPN 电流 - 集电极 (Ic)(最大):1A 电压 - 集电极发射极击穿(最大):30V Ib、Ic条件下的Vce饱和度(最大):200mV @ 100mA,1A 电流 - 集电极截止(最大):100nA 在某 Ic、Vce 时的最小直流电流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 频率 - 转换:100MHz 安装类型:表面贴装 封装/外壳:TO-236-3,SC-59,SOT-23-3 供应商设备封装:SOT-23-3(TO-236) 包装:Digi-Reel® 其它名称:MMBT489LT1GOSDKR
MMBT6428 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MMBT6428 制造商:Fairchild Semiconductor Corporation 功能描述:Bipolar Transistor
MMBT6428_Q 功能描述:两极晶体管 - BJT NPN Transistor General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2
MMBT6428LT1 功能描述:两极晶体管 - BJT 200mA 60V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶体管极性:PNP 集电极—基极电压 VCBO: 集电极—发射极最大电压 VCEO:- 40 V 发射极 - 基极电压 VEBO:- 6 V 集电极—射极饱和电压: 最大直流电集电极电流: 增益带宽产品fT: 直流集电极/Base Gain hfe Min:100 A 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PowerFLAT 2 x 2