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参数资料
| 型号： | MMFT3055VT3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封装： | CASE 318E-04, 4 PIN |
| 文件页数： | 11/17页 |
| 文件大小： | 193K |
| 代理商： | MMFT3055VT3 |
MMFT3055V
http://onsemi.com
630
TYPICAL ELECTRICAL CHARACTERISTICS
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(NORMALIZED)
01
2
3
4
5
0
1.5
2.5
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
23
4
5
6
0
1.5
3
4
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
0.5
1
2.5
4
0
0.05
0.1
0.15
R DS(on)
,DRAIN-T
O-SOURCE
RESIST
ANCE
(OHMS)
01
3.5
4
0.050
0.065
0.140
0.170
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
-50
0.6
0.8
1.2
1.6
020
50
60
10
100
1000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
-25
0
25
50
75
100
125
150
TJ = 25°C
VDS ≥ 10 V
TJ = - 55°C
25°C
100°C
TJ = 25°C
VGS = 0 V
VGS = 10 V
ID = 0.85 A
5 V
4 V
3.5 V
4.5 V
0.5
1
2
2.5
3.5
4.5
5.5
0.5
2
3.5
VGS = 10 V
TJ = 100°C
25°C
-55°C
2
3.5
0.5
2
2.5
10
30
40
0.025
0.075
0.125
0.080
0.155
0.095
1.0
1.4
TJ = 125°C
VGS = 10 V
15 V
175
67
8
9
10
2.5
1
3
1.5
0.175
0.2
0.125
1.5
3
0.110
0.4
0.2
0
1.8
2.0
100°C
3
3.5
4
7 V
6 V
5.5 V
6.5
7
7.5
0.225
0.25
525
55
15
35
45
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