- 您现在的位置：买卖IC网 > PDF目录98025 > MMFT3055VT3 (ON SEMICONDUCTOR) 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA PDF资料下载
参数资料
| 型号： | MMFT3055VT3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封装： | CASE 318E-04, 4 PIN |
| 文件页数： | 4/17页 |
| 文件大小： | 193K |
| 代理商： | MMFT3055VT3 |
http://onsemi.com
1409
CASE OUTLINE AND PACKAGE DIMENSIONS
23
4
5
6
A
L
1
S
G
D
B
H
C
0.05 (0.002)
DIM
MIN
MAX
MIN
MAX
INCHES
MILLIMETERS
A
0.1142 0.1220
2.90
3.10
B
0.0512 0.0669
1.30
1.70
C
0.0354 0.0433
0.90
1.10
D
0.0098 0.0197
0.25
0.50
G
0.0335 0.0413
0.85
1.05
H
0.0005 0.0040
0.013
0.100
J
0.0040 0.0102
0.10
0.26
K
0.0079 0.0236
0.20
0.60
L
0.0493 0.0610
1.25
1.55
M
0
10
0
10
S
0.0985 0.1181
2.50
3.00
__
_
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
M
J
K
TSOP–6
CASE 318G–02
ISSUE G
DIM
MIN
MAX
MIN
MAX
INCHES
MILLIMETERS
A
2.90
3.10
0.114
0.122
B
4.30
4.50
0.169
0.177
C
---
1.10
---
0.043
D
0.05
0.15
0.002
0.006
F
0.50
0.70
0.020
0.028
G
0.65 BSC
0.026 BSC
L
6.40 BSC
0.252 BSC
M
0
8
0
8
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH. PROTRUSIONS OR GATE BURRS. MOLD
FLASH OR GATE BURRS SHALL NOT EXCEED
0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL NOT
EXCEED 0.25 (0.010) PER SIDE.
5. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
6. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE -W-.
___
_
SEATING
PLANE
PIN 1
1
4
85
DETAIL E
B
C
D
A
G
L
2X
L/2
–U–
S
U
0.20 (0.008) T
S
U
M
0.10 (0.004)
V S
T
0.076 (0.003)
–T–
–V–
–W–
8x
REF
K
IDENT
K
0.19
0.30
0.007
0.012
S
U
0.20 (0.008) T
P1
P
DETAIL E
F
M
0.25 (0.010)
K1
K
JJ1
SECTION N–N
J
0.09
0.20
0.004
0.008
K1
0.19
0.25
0.007
0.010
J1
0.09
0.16
0.004
0.006
P
---
2.20
---
0.087
P1
---
3.20
---
0.126
N
TSSOP–8
CASE 948S–01
ISSUE O
相关PDF资料 |
PDF描述 |
|---|---|
| MMFT6661T1 | 500 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| MMFT6661T3 | 500 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| MMFT960T3 | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| MMPQ2222R1 | 500 mA, 30 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| MMPQ2222R2 | 500 mA, 30 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MMFT5P03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS MEDIUM POWER FET 5.2 AMPERES 30 VOLTS |
| MMFT5P03HDT1 | 功能描述:MOSFET P-CH 30V 3.7A SOT223 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| MMFT5P03HDT3 | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS P-CHANNEL FIELD FEECT TRANSISTOR |
| MMFT6N03HD | 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:TMOS POWER 6.0 AMPERES 30 VOLTS |
| MMFT960T1 | 功能描述:MOSFET 60V 300mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。