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参数资料
| 型号： | MMFT3055VT3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA |
| 封装： | CASE 318E-04, 4 PIN |
| 文件页数： | 2/17页 |
| 文件大小： | 193K |
| 代理商： | MMFT3055VT3 |
http://onsemi.com
1407
CASE OUTLINE AND PACKAGE DIMENSIONS
CHIPFET
CASE 1206A–01
ISSUE A
B
S
C
D
G
L
A
1
234
8
765
M
J
K
1
2
3
4
8
7
6
5
DIM
MIN
MAX
MIN
MAX
INCHES
MILLIMETERS
A
2.95
3.10
0.116
0.122
B
1.55
1.70
0.061
0.067
C
1.00
1.10
0.039
0.043
D
0.25
0.35
0.010
0.014
G
0.65 BSC
0.025 BSC
J
0.10
0.15
0.004
0.008
K
0.30
0.45
0.012
0.018
L
0.55 BSC
0.022 BSC
M
°
5 NOM
S
---
1.80
---
0.071
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM
PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN
HORIZONTAL AND VERTICAL SHALL NOT EXCEED
0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE
BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND
BOTTOM LEAD SURFACE.
0.05 (0.002)
°
5 NOM
SEATING
PLANE
1
4
5
8
N
J
X 45
_
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER
SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN
EXCESS OF THE D DIMENSION AT MAXIMUM
MATERIAL CONDITION.
A
B
S
D
H
C
0.10 (0.004)
DIM
A
MIN
MAX
MIN
MAX
INCHES
4.80
5.00
0.189
0.197
MILLIMETERS
B
3.80
4.00
0.150
0.157
C
1.35
1.75
0.053
0.069
D
0.33
0.51
0.013
0.020
G
1.27 BSC
0.050 BSC
H
0.10
0.25
0.004
0.010
J
0.19
0.25
0.007
0.010
K
0.40
1.27
0.016
0.050
M
0
8
0
8
N
0.25
0.50
0.010
0.020
S
5.80
6.20
0.228
0.244
–X–
–Y–
G
M
Y
M
0.25 (0.010)
–Z–
Y
M
0.25 (0.010)
Z
S
X S
M
____
SO–8
CASE 751–07
ISSUE W
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