参数资料
型号: MMFT3055VT3
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: 1700 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
封装: CASE 318E-04, 4 PIN
文件页数: 16/17页
文件大小: 193K
代理商: MMFT3055VT3
MMFT3055V
http://onsemi.com
635
0.8 Watts
1.25 Watts*
1.5 Watts
A, Area (square inches)
0.0
0.2
0.4
0.6
0.8
1.0
160
140
120
100
80
Figure 15. Thermal Resistance versus Drain Pad
Area for the SOT–223 Package (Typical)
Board Material = 0.0625″
G-10/FR-4, 2 oz Copper
TA = 25°C
*Mounted on the DPAK footprint
R
,
Thermal
Resistance,
Junction
to
Ambient
(C/W)
θ JA
°
Another alternative would be to use a ceramic substrate
or an aluminum core board such as Thermal Clad
t. Using
a board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass
or stainless steel with a typical thickness of 0.008 inches.
The stencil opening size for the SOT–223 package should
be the same as the pad size on the printed circuit board, i.e.,
a 1:1 registration.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100
°C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10
°C.
The soldering temperature and time shall not exceed
260
°C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5
°C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied
during cooling
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
相关PDF资料
PDF描述
MMFT6661T1 500 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
MMFT6661T3 500 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
MMFT960T3 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
MMPQ2222R1 500 mA, 30 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
MMPQ2222R2 500 mA, 30 V, 4 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
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