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参数资料
| 型号： | MP6K31TR |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 7/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 60V 2A MPT6 |
| 产品目录绘图： | MOSFET P-Channel MPT6 |
| 特色产品： | ECOMOS? Series MOSFETs |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 290 毫欧 @ 2A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 2nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 110pF @ 10V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-SMD，扁平引线 |
| 供应商设备封装： | MPT6 |
| 包装： | 标准包装 |
| 其它名称： | MP6K31DKR |
Notice
Notes
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
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use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, commu-
nication devices, electronic appliances and amusement devices).
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? 2010 ROHM Co., Ltd. All rights reserved.
R1010 A
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