参数资料
型号: MPC603ERX200LX
厂商: MOTOROLA INC
元件分类: 微控制器/微处理器
英文描述: 32-BIT, 200 MHz, RISC PROCESSOR, CBGA255
封装: 21 X 21 MM, 1.27 MM PITCH, CERAMIC, BGA-255
文件页数: 33/36页
文件大小: 451K
代理商: MPC603ERX200LX
6
PID7t-603e Hardware Specifications
Electrical and Thermal Characteristics
Table 4 provides the package thermal characteristics for the PID7t-603e.
Table 5 provides the DC electrical characteristics for the PID7t-603e.
Table 4. Package Thermal Characteristics
Characteristic
Symbol
Value
CBGA
Value
PBGA
Rating
Package die junction-to-case thermal resistance (typical)
qJC
0.095
8.0
°C/W
Package die junction-to-ball thermal resistance (typical)
qJB
3.5
13
°C/W
Note: Refer to Section 1.8, “System Design Information,” for more details about thermal management.
Table 5. DC Electrical Specifications
Vdd = AVdd = 2.5 ± 5% V dc, OVdd = 3.3 ± 5% V dc, GND = 0 V dc, 0
Tj 105 °C
Characteristic
Symbol
Min
Max
Unit
Notes
Input high voltage (all inputs except SYSCLK)
VIH
2.0
5.5
V
Input low voltage (all inputs except SYSCLK)
VIL
GND
0.8
V
SYSCLK input high voltage
CVIH
2.4
5.5
V
SYSCLK input low voltage
CVIL
GND
0.4
V
Input leakage current, Vin = 3.465 V
Iin
30
A
1,2
Vin = 5.5 V
Iin
300
A
1,2
Hi-Z (off-state) leakage current, Vin = 3.465 V
ITSI
30
A
1,2
Vin = 5.5 V
ITSI
300
A
1,2
Output high voltage, IOH = 7 mA
VOH
2.4
V
Output low voltage, IOL = 7 mA
VOL
0.4
V
Capacitance, Vin = 0 V, f = 1 MHz (excludes TS, ABB, DBB, and
ARTRY)
Cin
10.0
pF
3
Capacitance, Vin = 0 V, f = 1 MHz (for TS, ABB, DBB, and ARTRY)Cin
15.0
pF
3
Notes:
1. Excludes test signals (LSSD_MODE, L1_TSTCLK, L2_TSTCLK, and JTAG signals).
2. The leakage is measured for nominal OVdd and Vdd or both OVdd and Vdd must vary in the same direction
(for example, both OVdd and Vdd vary by either +5% or -5%).
3. Capacitance is periodically sampled rather than 100% tested.
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